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Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures. / Kalygina, Vera M.; Tsymbalov, Alexander V.; Korusenko, Petr M.; Koroleva, Aleksandra V.; Zhizhin, Evgeniy V.

в: Crystals, Том 14, № 3, 268, 09.03.2024.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kalygina, VM, Tsymbalov, AV, Korusenko, PM, Koroleva, AV & Zhizhin, EV 2024, 'Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures', Crystals, Том. 14, № 3, 268. https://doi.org/10.3390/cryst14030268

APA

Kalygina, V. M., Tsymbalov, A. V., Korusenko, P. M., Koroleva, A. V., & Zhizhin, E. V. (2024). Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures. Crystals, 14(3), [268]. https://doi.org/10.3390/cryst14030268

Vancouver

Kalygina VM, Tsymbalov AV, Korusenko PM, Koroleva AV, Zhizhin EV. Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures. Crystals. 2024 Март 9;14(3). 268. https://doi.org/10.3390/cryst14030268

Author

Kalygina, Vera M. ; Tsymbalov, Alexander V. ; Korusenko, Petr M. ; Koroleva, Aleksandra V. ; Zhizhin, Evgeniy V. / Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures. в: Crystals. 2024 ; Том 14, № 3.

BibTeX

@article{37b18b76cd614671ad5d1c41001201f6,
title = "Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures",
abstract = "Resistive metal/β-Ga2O3/metal structures with different interelectrode distances and electrode topologies were investigated. The oxide films were deposited by radio-frequency magnetron sputtering of a Ga2O3 (99.999%) target onto an unheated sapphire c-plane substrate (0001) in an Ar/O2 gas mixture. The films are sensitive to ultraviolet radiation with wavelength λ = 254. Structures with interdigital electrode topology have pronounced persistent conductivity. It is shown that the magnitude of responsivity, response time τr, and recovery time τd are determined by the concentration of free holes p involved in recombination processes. For the first time, it is proposed to consider hole trapping both by surface states Nts at the metal/Ga2O3 interface and by traps in the bulk of the film.",
keywords = "gallium oxide, MSM structures, UV radiation, traps, persistent conductivity, RFMS",
author = "Kalygina, {Vera M.} and Tsymbalov, {Alexander V.} and Korusenko, {Petr M.} and Koroleva, {Aleksandra V.} and Zhizhin, {Evgeniy V.}",
year = "2024",
month = mar,
day = "9",
doi = "10.3390/cryst14030268",
language = "English",
volume = "14",
journal = "Crystals",
issn = "2073-4352",
publisher = "MDPI AG",
number = "3",

}

RIS

TY - JOUR

T1 - Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures

AU - Kalygina, Vera M.

AU - Tsymbalov, Alexander V.

AU - Korusenko, Petr M.

AU - Koroleva, Aleksandra V.

AU - Zhizhin, Evgeniy V.

PY - 2024/3/9

Y1 - 2024/3/9

N2 - Resistive metal/β-Ga2O3/metal structures with different interelectrode distances and electrode topologies were investigated. The oxide films were deposited by radio-frequency magnetron sputtering of a Ga2O3 (99.999%) target onto an unheated sapphire c-plane substrate (0001) in an Ar/O2 gas mixture. The films are sensitive to ultraviolet radiation with wavelength λ = 254. Structures with interdigital electrode topology have pronounced persistent conductivity. It is shown that the magnitude of responsivity, response time τr, and recovery time τd are determined by the concentration of free holes p involved in recombination processes. For the first time, it is proposed to consider hole trapping both by surface states Nts at the metal/Ga2O3 interface and by traps in the bulk of the film.

AB - Resistive metal/β-Ga2O3/metal structures with different interelectrode distances and electrode topologies were investigated. The oxide films were deposited by radio-frequency magnetron sputtering of a Ga2O3 (99.999%) target onto an unheated sapphire c-plane substrate (0001) in an Ar/O2 gas mixture. The films are sensitive to ultraviolet radiation with wavelength λ = 254. Structures with interdigital electrode topology have pronounced persistent conductivity. It is shown that the magnitude of responsivity, response time τr, and recovery time τd are determined by the concentration of free holes p involved in recombination processes. For the first time, it is proposed to consider hole trapping both by surface states Nts at the metal/Ga2O3 interface and by traps in the bulk of the film.

KW - gallium oxide

KW - MSM structures

KW - UV radiation

KW - traps

KW - persistent conductivity

KW - RFMS

UR - https://www.mendeley.com/catalogue/12ae04eb-9162-3346-a61d-383a34ce50c7/

U2 - 10.3390/cryst14030268

DO - 10.3390/cryst14030268

M3 - Article

VL - 14

JO - Crystals

JF - Crystals

SN - 2073-4352

IS - 3

M1 - 268

ER -

ID: 117580426