Standard

Effect of oxygen presence in sputtering chamber on magnetization of thin FeCo films. / Pusenkov, V. M.; Moskalev, K.; Pleshanov, N.; Schebetov, A.; Syromyatnikov, V.; Ul'Yanov, V.; Kobzev, A.; Nikonov, O.

In: Physica B: Condensed Matter, Vol. 276-278, 03.2000, p. 654-655.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Pusenkov, VM, Moskalev, K, Pleshanov, N, Schebetov, A, Syromyatnikov, V, Ul'Yanov, V, Kobzev, A & Nikonov, O 2000, 'Effect of oxygen presence in sputtering chamber on magnetization of thin FeCo films', Physica B: Condensed Matter, vol. 276-278, pp. 654-655. https://doi.org/10.1016/S0921-4526(99)01744-5

APA

Pusenkov, V. M., Moskalev, K., Pleshanov, N., Schebetov, A., Syromyatnikov, V., Ul'Yanov, V., Kobzev, A., & Nikonov, O. (2000). Effect of oxygen presence in sputtering chamber on magnetization of thin FeCo films. Physica B: Condensed Matter, 276-278, 654-655. https://doi.org/10.1016/S0921-4526(99)01744-5

Vancouver

Pusenkov VM, Moskalev K, Pleshanov N, Schebetov A, Syromyatnikov V, Ul'Yanov V et al. Effect of oxygen presence in sputtering chamber on magnetization of thin FeCo films. Physica B: Condensed Matter. 2000 Mar;276-278:654-655. https://doi.org/10.1016/S0921-4526(99)01744-5

Author

Pusenkov, V. M. ; Moskalev, K. ; Pleshanov, N. ; Schebetov, A. ; Syromyatnikov, V. ; Ul'Yanov, V. ; Kobzev, A. ; Nikonov, O. / Effect of oxygen presence in sputtering chamber on magnetization of thin FeCo films. In: Physica B: Condensed Matter. 2000 ; Vol. 276-278. pp. 654-655.

BibTeX

@article{8c0b707e2cba46d1a98a2fb1a6b82477,
title = "Effect of oxygen presence in sputtering chamber on magnetization of thin FeCo films",
abstract = "The effect of oxygen presence in sputtering chamber on magnetization of thin (approximately 700-800 angstroms) FeCo films was studied by polarized neutron reflectometry. The samples were prepared by magnetron sputtering of the Fe36Co64 alloy onto glass substrates in the presence of oxygen in the sputtering chamber. For a given oxygen content in the sputtering chamber the oxygen concentration in the film decreased with the sputtering rate. The increase in oxygen inside the film was found to decrease its magnetic saturation induction. The exact element depth profiles of the prepared samples was made by Rutherford back scattering (RBS) technique.",
author = "Pusenkov, {V. M.} and K. Moskalev and N. Pleshanov and A. Schebetov and V. Syromyatnikov and V. Ul'Yanov and A. Kobzev and O. Nikonov",
year = "2000",
month = mar,
doi = "10.1016/S0921-4526(99)01744-5",
language = "English",
volume = "276-278",
pages = "654--655",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
note = "2nd European Conference on Neutron Scattering (ECNS '99) ; Conference date: 01-09-1999 Through 04-09-1999",

}

RIS

TY - JOUR

T1 - Effect of oxygen presence in sputtering chamber on magnetization of thin FeCo films

AU - Pusenkov, V. M.

AU - Moskalev, K.

AU - Pleshanov, N.

AU - Schebetov, A.

AU - Syromyatnikov, V.

AU - Ul'Yanov, V.

AU - Kobzev, A.

AU - Nikonov, O.

PY - 2000/3

Y1 - 2000/3

N2 - The effect of oxygen presence in sputtering chamber on magnetization of thin (approximately 700-800 angstroms) FeCo films was studied by polarized neutron reflectometry. The samples were prepared by magnetron sputtering of the Fe36Co64 alloy onto glass substrates in the presence of oxygen in the sputtering chamber. For a given oxygen content in the sputtering chamber the oxygen concentration in the film decreased with the sputtering rate. The increase in oxygen inside the film was found to decrease its magnetic saturation induction. The exact element depth profiles of the prepared samples was made by Rutherford back scattering (RBS) technique.

AB - The effect of oxygen presence in sputtering chamber on magnetization of thin (approximately 700-800 angstroms) FeCo films was studied by polarized neutron reflectometry. The samples were prepared by magnetron sputtering of the Fe36Co64 alloy onto glass substrates in the presence of oxygen in the sputtering chamber. For a given oxygen content in the sputtering chamber the oxygen concentration in the film decreased with the sputtering rate. The increase in oxygen inside the film was found to decrease its magnetic saturation induction. The exact element depth profiles of the prepared samples was made by Rutherford back scattering (RBS) technique.

UR - http://www.scopus.com/inward/record.url?scp=0033893229&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)01744-5

DO - 10.1016/S0921-4526(99)01744-5

M3 - Conference article

AN - SCOPUS:0033893229

VL - 276-278

SP - 654

EP - 655

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - 2nd European Conference on Neutron Scattering (ECNS '99)

Y2 - 1 September 1999 through 4 September 1999

ER -

ID: 86507391