Research output: Contribution to journal › Article › peer-review
Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy. / Bolshakov, A.D.; Mozharov, A.M.; Sapunov, Georgiy A. ; Shtrom, I.V.; Sibirev, N.V.; Fedorov, Vladimir V; Ubyivovk, E.V.; Tchernycheva, Maria; Cirlin, G.E.; Mukhin, I.S.
In: Beilstein Journal of Nanotechnology, Vol. 9, No. 1, 15.01.2018, p. 146-154.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
AU - Bolshakov, A.D.
AU - Mozharov, A.M.
AU - Sapunov, Georgiy A.
AU - Shtrom, I.V.
AU - Sibirev, N.V.
AU - Fedorov, Vladimir V
AU - Ubyivovk, E.V.
AU - Tchernycheva, Maria
AU - Cirlin, G.E.
AU - Mukhin, I.S.
PY - 2018/1/15
Y1 - 2018/1/15
N2 - In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5·10 19 cm -3.
AB - In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5·10 19 cm -3.
KW - A3B5 on Si
KW - Epitaxy
KW - GaN
KW - MBE
KW - Nanotube-like nanostructures
KW - Nanotubes
KW - Nanowires
KW - Si
KW - SI-DOPED GAN
KW - DEFECTS
KW - SILICON
KW - nanotube-like nanostructures
KW - CATALYST
KW - LIGHT-EMITTING-DIODES
KW - EXCITON
KW - nanotubes
KW - nanowires
KW - NUCLEATION
KW - STRESS
KW - EFFICIENCY
KW - NANOWIRES
KW - epitaxy
UR - http://www.scopus.com/inward/record.url?scp=85040866756&partnerID=8YFLogxK
UR - http://www.mendeley.com/research/dopantstimulated-growth-gan-nanotubelike-nanostructures-si111-molecular-beam-epitaxy
U2 - doi:10.3762/bjnano.9.17
DO - doi:10.3762/bjnano.9.17
M3 - Article
C2 - 29441260
VL - 9
SP - 146
EP - 154
JO - Beilstein Journal of Nanotechnology
JF - Beilstein Journal of Nanotechnology
SN - 2190-4286
IS - 1
ER -
ID: 11750018