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DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures1. / Sokolov, P. A.; Bazlov, N. V.; Puchkova, A. O.; Vyvenko, O. F.; Kasyanenko, N. A.

In: Protection of Metals and Physical Chemistry of Surfaces, Vol. 47, No. 5, 09.2011, p. 566-571.

Research output: Contribution to journal › Article › peer-review

Harvard

Sokolov, PA, Bazlov, NV, Puchkova, AO, Vyvenko, OF & Kasyanenko, NA 2011, 'DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures1', Protection of Metals and Physical Chemistry of Surfaces, vol. 47, no. 5, pp. 566-571. https://doi.org/10.1134/S2070205111050170

APA

Sokolov, P. A., Bazlov, N. V., Puchkova, A. O., Vyvenko, O. F., & Kasyanenko, N. A. (2011). DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures1. Protection of Metals and Physical Chemistry of Surfaces, 47(5), 566-571. https://doi.org/10.1134/S2070205111050170

Vancouver

Sokolov PA, Bazlov NV, Puchkova AO, Vyvenko OF, Kasyanenko NA. DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures1. Protection of Metals and Physical Chemistry of Surfaces. 2011 Sep;47(5):566-571. https://doi.org/10.1134/S2070205111050170

Author

Sokolov, P. A. ; Bazlov, N. V. ; Puchkova, A. O. ; Vyvenko, O. F. ; Kasyanenko, N. A. / DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures1. In: Protection of Metals and Physical Chemistry of Surfaces. 2011 ; Vol. 47, No. 5. pp. 566-571.

BibTeX

@article{be1787754836445fa4797b55a29ade3e,
title = "DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures1",
abstract = "DNA molecules immobilization on n-type single silicon was investigated. Electronic states were studied by measuring voltage-ampere characteristics (VAC) of Au-(n-Si) contacts with DNA molecules on the interface. It is showed that strong DNA fixation is observed in the presence of magnesium ions in solution. Molecules conformation on the surface is determined by the degree of the substrate hydrophobicity. Devel- oped method of DNA immobilization allows to create model systems with the molecules in the form of molecular mesh or ropes depending on irradiation intensity. Formed on the silicon surface molecular struc- tures have different effect on the electrical properties of Au-DNA-(n-Si) contacts. Presence of molecular mesh on the Schottky diode interface makes its VAC similar to ideal diode. The ropes lead to electronic state density increasing.",
author = "Sokolov, {P. A.} and Bazlov, {N. V.} and Puchkova, {A. O.} and Vyvenko, {O. F.} and Kasyanenko, {N. A.}",
note = "Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",
year = "2011",
month = sep,
doi = "10.1134/S2070205111050170",
language = "English",
volume = "47",
pages = "566--571",
journal = "Protection of Metals and Physical Chemistry of Surfaces",
issn = "2070-206X",
publisher = "Springer Nature",
number = "5",

}

RIS

TY - JOUR

T1 - DNA immobilization on n-type silicon surface and electrophysical properties of Au-DNA-(n-Si) structures1

AU - Sokolov, P. A.

AU - Bazlov, N. V.

AU - Puchkova, A. O.

AU - Vyvenko, O. F.

AU - Kasyanenko, N. A.

N1 - Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/9

Y1 - 2011/9

N2 - DNA molecules immobilization on n-type single silicon was investigated. Electronic states were studied by measuring voltage-ampere characteristics (VAC) of Au-(n-Si) contacts with DNA molecules on the interface. It is showed that strong DNA fixation is observed in the presence of magnesium ions in solution. Molecules conformation on the surface is determined by the degree of the substrate hydrophobicity. Devel- oped method of DNA immobilization allows to create model systems with the molecules in the form of molecular mesh or ropes depending on irradiation intensity. Formed on the silicon surface molecular struc- tures have different effect on the electrical properties of Au-DNA-(n-Si) contacts. Presence of molecular mesh on the Schottky diode interface makes its VAC similar to ideal diode. The ropes lead to electronic state density increasing.

AB - DNA molecules immobilization on n-type single silicon was investigated. Electronic states were studied by measuring voltage-ampere characteristics (VAC) of Au-(n-Si) contacts with DNA molecules on the interface. It is showed that strong DNA fixation is observed in the presence of magnesium ions in solution. Molecules conformation on the surface is determined by the degree of the substrate hydrophobicity. Devel- oped method of DNA immobilization allows to create model systems with the molecules in the form of molecular mesh or ropes depending on irradiation intensity. Formed on the silicon surface molecular struc- tures have different effect on the electrical properties of Au-DNA-(n-Si) contacts. Presence of molecular mesh on the Schottky diode interface makes its VAC similar to ideal diode. The ropes lead to electronic state density increasing.

UR - http://www.scopus.com/inward/record.url?scp=81855203377&partnerID=8YFLogxK

U2 - 10.1134/S2070205111050170

DO - 10.1134/S2070205111050170

M3 - Article

AN - SCOPUS:81855203377

VL - 47

SP - 566

EP - 571

JO - Protection of Metals and Physical Chemistry of Surfaces

JF - Protection of Metals and Physical Chemistry of Surfaces

SN - 2070-206X

IS - 5

ER -

ID: 73389975