Standard

Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy. / Reznik, R. R.; Cirlin, G. E.; Shtrom, I. V.; Khrebtov, A. I.; Soshnikov, I. P.; Kryzhanovskaya, N. V.; Moiseev, E. I.; Zhukov, A. E.

In: Technical Physics Letters, Vol. 44, No. 2, 01.02.2018, p. 112-114.

Research output: Contribution to journal › Article › peer-review

Harvard

Reznik, RR, Cirlin, GE, Shtrom, IV, Khrebtov, AI, Soshnikov, IP, Kryzhanovskaya, NV, Moiseev, EI & Zhukov, AE 2018, 'Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy', Technical Physics Letters, vol. 44, no. 2, pp. 112-114. https://doi.org/10.1134/S1063785018020116

APA

Reznik, R. R., Cirlin, G. E., Shtrom, I. V., Khrebtov, A. I., Soshnikov, I. P., Kryzhanovskaya, N. V., Moiseev, E. I., & Zhukov, A. E. (2018). Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy. Technical Physics Letters, 44(2), 112-114. https://doi.org/10.1134/S1063785018020116

Vancouver

Reznik RR, Cirlin GE, Shtrom IV, Khrebtov AI, Soshnikov IP, Kryzhanovskaya NV et al. Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy. Technical Physics Letters. 2018 Feb 1;44(2):112-114. https://doi.org/10.1134/S1063785018020116

Author

Reznik, R. R. ; Cirlin, G. E. ; Shtrom, I. V. ; Khrebtov, A. I. ; Soshnikov, I. P. ; Kryzhanovskaya, N. V. ; Moiseev, E. I. ; Zhukov, A. E. / Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy. In: Technical Physics Letters. 2018 ; Vol. 44, No. 2. pp. 112-114.

BibTeX

@article{94f56f11df5147f5926bb00f2232ff42,
title = "Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy",
abstract = "Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.",
author = "Reznik, {R. R.} and Cirlin, {G. E.} and Shtrom, {I. V.} and Khrebtov, {A. I.} and Soshnikov, {I. P.} and Kryzhanovskaya, {N. V.} and Moiseev, {E. I.} and Zhukov, {A. E.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = feb,
day = "1",
doi = "10.1134/S1063785018020116",
language = "English",
volume = "44",
pages = "112--114",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy

AU - Reznik, R. R.

AU - Cirlin, G. E.

AU - Shtrom, I. V.

AU - Khrebtov, A. I.

AU - Soshnikov, I. P.

AU - Kryzhanovskaya, N. V.

AU - Moiseev, E. I.

AU - Zhukov, A. E.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/2/1

Y1 - 2018/2/1

N2 - Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.

AB - Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=85044952898&partnerID=8YFLogxK

U2 - 10.1134/S1063785018020116

DO - 10.1134/S1063785018020116

M3 - Article

AN - SCOPUS:85044952898

VL - 44

SP - 112

EP - 114

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -

ID: 98509091