CHARACTERIZATION OF VACANCY-RELATED DEFECTS INTRODUCED INTO SILICON DURING HEAT TREATMENT BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND GAMMA-RAY DIFFRACTION TECHNIQUES

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	259-262
Journal	Applied Physics A: Materials Science and Processing
Volume	62
Issue number	3
State	Published - 1996
Externally published	Yes

ID: 5548681