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Breakdown of the quantum hall effects in hole systems at high induced currents. / Gething, J. D.; Matthews, A. J.; Usher, A.; Portnoi, M. E.; Kavokin, K. V.; Henini, M.

PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 561-562 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Gething, JD, Matthews, AJ, Usher, A, Portnoi, ME, Kavokin, KV & Henini, M 2005, Breakdown of the quantum hall effects in hole systems at high induced currents. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 561-562, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 26/07/04. https://doi.org/10.1063/1.1994231

APA

Gething, J. D., Matthews, A. J., Usher, A., Portnoi, M. E., Kavokin, K. V., & Henini, M. (2005). Breakdown of the quantum hall effects in hole systems at high induced currents. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 561-562). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994231

Vancouver

Gething JD, Matthews AJ, Usher A, Portnoi ME, Kavokin KV, Henini M. Breakdown of the quantum hall effects in hole systems at high induced currents. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 561-562. (AIP Conference Proceedings). https://doi.org/10.1063/1.1994231

Author

Gething, J. D. ; Matthews, A. J. ; Usher, A. ; Portnoi, M. E. ; Kavokin, K. V. ; Henini, M. / Breakdown of the quantum hall effects in hole systems at high induced currents. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. pp. 561-562 (AIP Conference Proceedings).

BibTeX

@inproceedings{ae8a95f790d34e499fc1eb5df4d23501,
title = "Breakdown of the quantum hall effects in hole systems at high induced currents",
abstract = "The magnetisation of two dimensional hole systems in the quantum Hall regime has been studied using a highly-sensitive torsion balance magnetometer. In a time varying magnetic field eddy currents are induced which become large around integer and fractional filling factors where ρxx takes a very low value. The sweep rate and temperature dependence of these induced currents are shown to be in good agreement with the model of quantum Hall effect breakdown proposed recently by Matthews et al. This model also allows comparison between the energy gap at different filling factors and so provides a measurement of the fractional quantum Hall effect energy gap, Δ1/3.",
author = "Gething, {J. D.} and Matthews, {A. J.} and A. Usher and Portnoi, {M. E.} and Kavokin, {K. V.} and M. Henini",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994231",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "561--562",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

RIS

TY - GEN

T1 - Breakdown of the quantum hall effects in hole systems at high induced currents

AU - Gething, J. D.

AU - Matthews, A. J.

AU - Usher, A.

AU - Portnoi, M. E.

AU - Kavokin, K. V.

AU - Henini, M.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - The magnetisation of two dimensional hole systems in the quantum Hall regime has been studied using a highly-sensitive torsion balance magnetometer. In a time varying magnetic field eddy currents are induced which become large around integer and fractional filling factors where ρxx takes a very low value. The sweep rate and temperature dependence of these induced currents are shown to be in good agreement with the model of quantum Hall effect breakdown proposed recently by Matthews et al. This model also allows comparison between the energy gap at different filling factors and so provides a measurement of the fractional quantum Hall effect energy gap, Δ1/3.

AB - The magnetisation of two dimensional hole systems in the quantum Hall regime has been studied using a highly-sensitive torsion balance magnetometer. In a time varying magnetic field eddy currents are induced which become large around integer and fractional filling factors where ρxx takes a very low value. The sweep rate and temperature dependence of these induced currents are shown to be in good agreement with the model of quantum Hall effect breakdown proposed recently by Matthews et al. This model also allows comparison between the energy gap at different filling factors and so provides a measurement of the fractional quantum Hall effect energy gap, Δ1/3.

UR - http://www.scopus.com/inward/record.url?scp=33749496247&partnerID=8YFLogxK

U2 - 10.1063/1.1994231

DO - 10.1063/1.1994231

M3 - Conference contribution

AN - SCOPUS:33749496247

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 561

EP - 562

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

ID: 39910484