• P.G. Uymina
  • M.A. Anikina
  • A.B. Speshilova
  • V.M. Kondratev
  • E.P. Karaseva
  • S.V. Shmakov
  • A. Kuznetsov
  • A.V. Syuy
  • A.A. Osipov
  • M.V. Mishin
  • A.D. Bolshakov
The burgeoning field of two-dimensional (2D) materials encompass a diverse range of layered structures, including transition metal dichalcogenides (TMDCs) exhibiting encouraging electronic and optical properties. Modern growth protocols allow for synthesis of the 2D materials with distinct morphologies such as vertical, enabling platform for efficient sensorics, optoelectronics and catalysis while control over their geometry is still challenging. This study investigates the synthesis and morphology of vertically aligned MoS2 structures fabricated through chemical vapor deposition (CVD), emphasizing the ability to control growth parameters for tailoring specific attributes. A new descriptive framework for geometry classification is proposed. We unveil four distinct morphological types of the vertical MoS2. Our findings indicate that the specific morphological type can be achieved through precise tuning of both the growth temperature and the sample positioning within the growth chamber. The resulting structures are extensively characterized using spectroscopic techniques demonstrting ability to tailor the optical response including synthesis of optically-active materials. The findings not only advance the comprehension of 2D growth techniques but also open pathways for the design of customized materials optimized for diverse functional applications. © 2025 Elsevier B.V., All rights reserved.
Original languageEnglish
JournalMaterials Science in Semiconductor Processing
Volume200
DOIs
StatePublished - 1 Dec 2025

    Research areas

  • CVD, Molybdenum disulfide (MoS2), Morphology analysis, Optical properties, Vertically-aligned structures (VAS), Layered semiconductors, Molybdenum compounds, Morphology, Sulfur compounds, Chemical vapour deposition, Molybdenum disulfide, Molybdenum disulphide (MoS2), MoS 2, Optical-, Property, Two-dimensional materials, Vertically aligned, Vertically-aligned structure, Chemical vapor deposition

ID: 143469163