Research output: Contribution to journal › Article › peer-review
Bi2O2SO4, a new representative of the grandreefite structure type. / Charkin, D. O.; Akimov, G. A.; Plokhikh, I. V.; Zaloga, A. N.; Borisov, A. S.; Stefanovich, S. Yu; Kuznetsov, A. N.; Siidra, O. I.
In: Journal of Solid State Chemistry, Vol. 282, 121124, 02.2020.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Bi2O2SO4, a new representative of the grandreefite structure type
AU - Charkin, D. O.
AU - Akimov, G. A.
AU - Plokhikh, I. V.
AU - Zaloga, A. N.
AU - Borisov, A. S.
AU - Stefanovich, S. Yu
AU - Kuznetsov, A. N.
AU - Siidra, O. I.
PY - 2020/2
Y1 - 2020/2
N2 - Single-phase polycrystalline bismuth oxysulfate, Bi2O2SO4, has been prepared via low-temperature reaction between Bi2O2CO3 and (NH4)2SO4. The compound is monoclinic (C2/m, a = 14.1659(4) Å, b = 4.2344(1) Å, c = 8.2100(2) Å, β = 106.7201(8)°, V = 471.65(2) Å3) and isostructural to isoelectronic Pb2F2SO4 and to isolobal Ln2O2SO4. Upon heating, it decomposes at ~550 °C into the Bi28O32(SO4)10 which is stable until ~775 °C. DFT calculations predict it to be a wide-gap semiconductor.
AB - Single-phase polycrystalline bismuth oxysulfate, Bi2O2SO4, has been prepared via low-temperature reaction between Bi2O2CO3 and (NH4)2SO4. The compound is monoclinic (C2/m, a = 14.1659(4) Å, b = 4.2344(1) Å, c = 8.2100(2) Å, β = 106.7201(8)°, V = 471.65(2) Å3) and isostructural to isoelectronic Pb2F2SO4 and to isolobal Ln2O2SO4. Upon heating, it decomposes at ~550 °C into the Bi28O32(SO4)10 which is stable until ~775 °C. DFT calculations predict it to be a wide-gap semiconductor.
KW - Bismuth oxysulfate
KW - Crystal structure
KW - Electronic structure
KW - Thermal properties
UR - http://www.scopus.com/inward/record.url?scp=85076534742&partnerID=8YFLogxK
U2 - 10.1016/j.jssc.2019.121124
DO - 10.1016/j.jssc.2019.121124
M3 - Article
AN - SCOPUS:85076534742
VL - 282
JO - Journal of Solid State Chemistry
JF - Journal of Solid State Chemistry
SN - 0022-4596
M1 - 121124
ER -
ID: 53747457