Single-phase polycrystalline bismuth oxysulfate, Bi2O2SO4, has been prepared via low-temperature reaction between Bi2O2CO3 and (NH4)2SO4. The compound is monoclinic (C2/m, a ​= ​14.1659(4) Å, b ​= ​4.2344(1) Å, c ​= ​8.2100(2) Å, β ​= ​106.7201(8)°, V ​= ​471.65(2) Å3) and isostructural to isoelectronic Pb2F2SO4 and to isolobal Ln2O2SO4. Upon heating, it decomposes at ~550 ​°C into the Bi28O32(SO4)10 which is stable until ~775 ​°C. DFT calculations predict it to be a wide-gap semiconductor.

Original languageEnglish
Article number121124
Number of pages8
JournalJournal of Solid State Chemistry
Volume282
DOIs
StatePublished - Feb 2020

    Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

    Research areas

  • Bismuth oxysulfate, Crystal structure, Electronic structure, Thermal properties

ID: 53747457