Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Annealing of lead thin films on silicon. / Сибирёв, Николай Владимирович; Штром, Игорь Викторович; Илькив, Игорь Владимирович; Сошников, И. П.
2024 International Conference Laser Optics, ICLO 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2024. p. 402 (IEEE Xplore Digital Library).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
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TY - GEN
T1 - Annealing of lead thin films on silicon
AU - Сибирёв, Николай Владимирович
AU - Штром, Игорь Викторович
AU - Илькив, Игорь Владимирович
AU - Сошников, И. П.
N1 - Conference code: 21
PY - 2024/7/1
Y1 - 2024/7/1
N2 - III-arsenide nanowires are often grown via the vapor-liquid-solid mechanism with foreign catalyst. Here we discuss the initial stage of nanowire growth with tin and lead catalyst - annealing of thin film. The influence of temperature and time of annealing was discussed.
AB - III-arsenide nanowires are often grown via the vapor-liquid-solid mechanism with foreign catalyst. Here we discuss the initial stage of nanowire growth with tin and lead catalyst - annealing of thin film. The influence of temperature and time of annealing was discussed.
KW - thin film annealing
KW - tin thin film on silicon
UR - https://ieeexplore.ieee.org/document/10624243
UR - https://www.mendeley.com/catalogue/40dd2d90-4399-3c1a-9b9c-be32a38538d1/
U2 - 10.1109/ICLO59702.2024.10624243
DO - 10.1109/ICLO59702.2024.10624243
M3 - Conference contribution
SN - 9798350390674
T3 - IEEE Xplore Digital Library
SP - 402
BT - 2024 International Conference Laser Optics, ICLO 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference Laser Optics
Y2 - 1 July 2024 through 5 July 2024
ER -
ID: 124439824