AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

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AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates. / Cirlin, G. E.; Reznik, R. R.; Shtrom, I. V.; Khrebtov, A. I.; Soshnikov, I. P.; Kukushkin, S. A.; Leandro, L.; Kasama, T.; Akopian, Nika.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 48, 484003, 08.11.2017.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{30da2d8f759c464eaa4cde3ad1ad7128,

title = "AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates",

abstract = "The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail. It is shown that by varying the growth parameters it is possible to form structures like quantum dots that emit in a wide wavelengths range. These quantum dots show sharp and intense emission lines when an optical signal is collected from a single nanowire. The technology proposed opens new possibilities for integration of direct-band A III B V materials on silicon platform.",

keywords = "AlGaAs, molecular beam epitaxy, nanowires, quantum dots, silicon",

author = "Cirlin, {G. E.} and Reznik, {R. R.} and Shtrom, {I. V.} and Khrebtov, {A. I.} and Soshnikov, {I. P.} and Kukushkin, {S. A.} and L. Leandro and T. Kasama and Nika Akopian",

note = "Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",

year = "2017",

month = nov,

day = "8",

doi = "10.1088/1361-6463/aa9169",

language = "English",

volume = "50",

journal = "Journal Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "48",

}

RIS

TY - JOUR

T1 - AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

AU - Cirlin, G. E.

AU - Reznik, R. R.

AU - Shtrom, I. V.

AU - Khrebtov, A. I.

AU - Soshnikov, I. P.

AU - Kukushkin, S. A.

AU - Leandro, L.

AU - Kasama, T.

AU - Akopian, Nika

PY - 2017/11/8

Y1 - 2017/11/8

N2 - The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail. It is shown that by varying the growth parameters it is possible to form structures like quantum dots that emit in a wide wavelengths range. These quantum dots show sharp and intense emission lines when an optical signal is collected from a single nanowire. The technology proposed opens new possibilities for integration of direct-band A III B V materials on silicon platform.

AB - The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail. It is shown that by varying the growth parameters it is possible to form structures like quantum dots that emit in a wide wavelengths range. These quantum dots show sharp and intense emission lines when an optical signal is collected from a single nanowire. The technology proposed opens new possibilities for integration of direct-band A III B V materials on silicon platform.

KW - AlGaAs

KW - molecular beam epitaxy

KW - nanowires

KW - quantum dots

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85035756736&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/aa9169

DO - 10.1088/1361-6463/aa9169

M3 - Article

AN - SCOPUS:85035756736

VL - 50

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 48

M1 - 484003

ER -

ID: 99721384