Standard

A new method to investigate separately the properties of screw and edge dislocations in II‐VI compound semiconductors. / Vyvenko, O. F.; Istratov, A. A.

In: physica status solidi (a), Vol. 138, No. 2, 16.08.1993, p. 715-721.

Research output: Contribution to journal › Article › peer-review

Harvard

Vyvenko, OF & Istratov, AA 1993, 'A new method to investigate separately the properties of screw and edge dislocations in II‐VI compound semiconductors', physica status solidi (a), vol. 138, no. 2, pp. 715-721. https://doi.org/10.1002/pssa.2211380243

APA

Vyvenko, O. F., & Istratov, A. A. (1993). A new method to investigate separately the properties of screw and edge dislocations in II‐VI compound semiconductors. physica status solidi (a), 138(2), 715-721. https://doi.org/10.1002/pssa.2211380243

Vancouver

Vyvenko OF, Istratov AA. A new method to investigate separately the properties of screw and edge dislocations in II‐VI compound semiconductors. physica status solidi (a). 1993 Aug 16;138(2):715-721. https://doi.org/10.1002/pssa.2211380243

Author

Vyvenko, O. F. ; Istratov, A. A. / A new method to investigate separately the properties of screw and edge dislocations in II‐VI compound semiconductors. In: physica status solidi (a). 1993 ; Vol. 138, No. 2. pp. 715-721.

BibTeX

@article{b978073c3c2c458ba870386b285f6d09,
title = "A new method to investigate separately the properties of screw and edge dislocations in II‐VI compound semiconductors",
abstract = "A new method to investigate separately the properties of screw and edge dislocations in II–VI semiconductors by means of space charge region spectroscopy is proposed consisting of the measurement on Schottky contacts evaporated either on the surface immediately after the indentation or after removing of a suitably chosen surface layer. The method is based on a model of the dislocation structure near microhardness indentations which assumes that the relation between the length of the edge and screw segments in dislocation halfloops is defined by the relation of their mobility, SEM‐CL and DLTS measurements on CdS confirm the validity of the proposed model.",
author = "Vyvenko, {O. F.} and Istratov, {A. A.}",
year = "1993",
month = aug,
day = "16",
doi = "10.1002/pssa.2211380243",
language = "English",
volume = "138",
pages = "715--721",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-Blackwell",
number = "2",

}

RIS

TY - JOUR

T1 - A new method to investigate separately the properties of screw and edge dislocations in II‐VI compound semiconductors

AU - Vyvenko, O. F.

AU - Istratov, A. A.

PY - 1993/8/16

Y1 - 1993/8/16

N2 - A new method to investigate separately the properties of screw and edge dislocations in II–VI semiconductors by means of space charge region spectroscopy is proposed consisting of the measurement on Schottky contacts evaporated either on the surface immediately after the indentation or after removing of a suitably chosen surface layer. The method is based on a model of the dislocation structure near microhardness indentations which assumes that the relation between the length of the edge and screw segments in dislocation halfloops is defined by the relation of their mobility, SEM‐CL and DLTS measurements on CdS confirm the validity of the proposed model.

AB - A new method to investigate separately the properties of screw and edge dislocations in II–VI semiconductors by means of space charge region spectroscopy is proposed consisting of the measurement on Schottky contacts evaporated either on the surface immediately after the indentation or after removing of a suitably chosen surface layer. The method is based on a model of the dislocation structure near microhardness indentations which assumes that the relation between the length of the edge and screw segments in dislocation halfloops is defined by the relation of their mobility, SEM‐CL and DLTS measurements on CdS confirm the validity of the proposed model.

UR - http://www.scopus.com/inward/record.url?scp=84987054650&partnerID=8YFLogxK

U2 - 10.1002/pssa.2211380243

DO - 10.1002/pssa.2211380243

M3 - Article

AN - SCOPUS:84987054650

VL - 138

SP - 715

EP - 721

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 2

ER -

ID: 88646459