A new method to investigate separately the properties of screw and edge dislocations in II–VI semiconductors by means of space charge region spectroscopy is proposed consisting of the measurement on Schottky contacts evaporated either on the surface immediately after the indentation or after removing of a suitably chosen surface layer. The method is based on a model of the dislocation structure near microhardness indentations which assumes that the relation between the length of the edge and screw segments in dislocation halfloops is defined by the relation of their mobility, SEM‐CL and DLTS measurements on CdS confirm the validity of the proposed model.