Standard
200 and 300 Mev/nucleon nuclear reactions responsible for single-event effects in microelectronics. / Jäderström, H.; Murin, Yu.; Babain, Yu.; Chubarov, M.; Pljusche, V.; Zubkov, M.; Nomokonov, P.; Olsson, N.; Blomgren, J.; Tippawan, U.; Westerberg, L.; Golubev, P.; Jakobsson, B.; Gerén, L.; Tegnér, P.-E.; Zartova, I.; Budzanowski, A.; Czech, B.; Skwirczynska, I.; Kondratiev, V.; Tang, H. H. K.; Aichelin, J.; Watanabe, Y.; Gudima, K.K.
In:
Physical Review C - Nuclear Physics, Vol. 77, No. 4, 2008, p. 044601_1-12.
Research output: Contribution to journal › Article
Harvard
Jäderström, H, Murin, Y, Babain, Y, Chubarov, M, Pljusche, V, Zubkov, M, Nomokonov, P, Olsson, N, Blomgren, J, Tippawan, U, Westerberg, L, Golubev, P, Jakobsson, B, Gerén, L, Tegnér, P-E, Zartova, I, Budzanowski, A, Czech, B, Skwirczynska, I
, Kondratiev, V, Tang, HHK, Aichelin, J, Watanabe, Y & Gudima, KK 2008, '
200 and 300 Mev/nucleon nuclear reactions responsible for single-event effects in microelectronics',
Physical Review C - Nuclear Physics, vol. 77, no. 4, pp. 044601_1-12.
https://doi.org/DOI: 10.1103/PhysRevC.77.044601APA
Jäderström, H., Murin, Y., Babain, Y., Chubarov, M., Pljusche, V., Zubkov, M., Nomokonov, P., Olsson, N., Blomgren, J., Tippawan, U., Westerberg, L., Golubev, P., Jakobsson, B., Gerén, L., Tegnér, P-E., Zartova, I., Budzanowski, A., Czech, B., Skwirczynska, I., ... Gudima, K. K. (2008).
200 and 300 Mev/nucleon nuclear reactions responsible for single-event effects in microelectronics.
Physical Review C - Nuclear Physics,
77(4), 044601_1-12.
https://doi.org/DOI: 10.1103/PhysRevC.77.044601Vancouver
Author
Jäderström, H. ; Murin, Yu. ; Babain, Yu. ; Chubarov, M. ; Pljusche, V. ; Zubkov, M. ; Nomokonov, P. ; Olsson, N. ; Blomgren, J. ; Tippawan, U. ; Westerberg, L. ; Golubev, P. ; Jakobsson, B. ; Gerén, L. ; Tegnér, P.-E. ; Zartova, I. ; Budzanowski, A. ; Czech, B. ; Skwirczynska, I.
; Kondratiev, V. ; Tang, H. H. K. ; Aichelin, J. ; Watanabe, Y. ; Gudima, K.K. /
200 and 300 Mev/nucleon nuclear reactions responsible for single-event effects in microelectronics. In:
Physical Review C - Nuclear Physics. 2008 ; Vol. 77, No. 4. pp. 044601_1-12.
BibTeX
@article{ce53cc5594b244b4ad726d6d6e05474e,
title = "200 and 300 Mev/nucleon nuclear reactions responsible for single-event effects in microelectronics",
author = "H. J{\"a}derstr{\"o}m and Yu. Murin and Yu. Babain and M. Chubarov and V. Pljusche and M. Zubkov and P. Nomokonov and N. Olsson and J. Blomgren and U. Tippawan and L. Westerberg and P. Golubev and B. Jakobsson and L. Ger{\'e}n and P.-E. Tegn{\'e}r and I. Zartova and A. Budzanowski and B. Czech and I. Skwirczynska and V. Kondratiev and Tang, {H. H. K.} and J. Aichelin and Y. Watanabe and K.K. Gudima",
year = "2008",
doi = "DOI: 10.1103/PhysRevC.77.044601",
language = "не определен",
volume = "77",
pages = "044601_1--12",
journal = "Physical Review C - Nuclear Physics",
issn = "0556-2813",
publisher = "American Physical Society",
number = "4",
}
RIS
TY - JOUR
T1 - 200 and 300 Mev/nucleon nuclear reactions responsible for single-event effects in microelectronics
AU - Jäderström, H.
AU - Murin, Yu.
AU - Babain, Yu.
AU - Chubarov, M.
AU - Pljusche, V.
AU - Zubkov, M.
AU - Nomokonov, P.
AU - Olsson, N.
AU - Blomgren, J.
AU - Tippawan, U.
AU - Westerberg, L.
AU - Golubev, P.
AU - Jakobsson, B.
AU - Gerén, L.
AU - Tegnér, P.-E.
AU - Zartova, I.
AU - Budzanowski, A.
AU - Czech, B.
AU - Skwirczynska, I.
AU - Kondratiev, V.
AU - Tang, H. H. K.
AU - Aichelin, J.
AU - Watanabe, Y.
AU - Gudima, K.K.
PY - 2008
Y1 - 2008
U2 - DOI: 10.1103/PhysRevC.77.044601
DO - DOI: 10.1103/PhysRevC.77.044601
M3 - статья
VL - 77
SP - 044601_1-12
JO - Physical Review C - Nuclear Physics
JF - Physical Review C - Nuclear Physics
SN - 0556-2813
IS - 4
ER -
