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200 and 300 Mev/nucleon nuclear reactions responsible for single-event effects in microelectronics
Research output
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Article
Department of Nuclear Physics Research Methods
Overview
Cite this
DOI
https://doi.org/DOI: 10.1103/PhysRevC.77.044601
Other version
V. Kondratiev
And 23 others
H. Jäderström
Yu. Murin
Yu. Babain
M. Chubarov
V. Pljusche
M. Zubkov
P. Nomokonov
N. Olsson
J. Blomgren
U. Tippawan
L. Westerberg
P. Golubev
B. Jakobsson
L. Gerén
P.-E. Tegnér
I. Zartova
A. Budzanowski
B. Czech
I. Skwirczynska
H. H. K. Tang
J. Aichelin
Y. Watanabe
K.K. Gudima
Original language
Undefined
Pages (from-to)
044601_1-12
Journal
Physical Review C - Nuclear Physics
Volume
77
Issue number
4
DOIs
https://doi.org/DOI: 10.1103/PhysRevC.77.044601
State
Published -
2008
ID: 5274455