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  1. 2020

  2. Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains

    Sibirev, N. V., Berdnikov, Y. S. & Sibirev, V. N., 1 Oct 2020, In: Semiconductors. 54, 10, p. 1320-1324 5 p.

    Research output: Contribution to journal › Article › peer-review

  3. Control of (Al,Ga)P Composition in Self-Catalyzed Nanowire Growth

    Bolshakov, A. D., Berdnikov, Y. S., Sibirev, N. V., Fedorov, V. & Shtrom, I. V., 2020, In: ФИЗИКА И МЕХАНИКА МАТЕРИАЛОВ. 44, 3, p. 316-323 8 p.

    Research output: Contribution to journal › Article › peer-review

  4. Stabilization of wurtzite crystal phase in arsenide nanowires via elastic stress

    Sibirev, N. V., Berdnikov, Y. S., Sibirev, V. N. & Dubrovskii, V. G., 2020, 2020 International Conference Laser Optics (ICLO). Institute of Electrical and Electronics Engineers Inc.

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

  5. Study of wurtzite crystal phase stabilization in heterostructured Ga(As,P) nanowires

    Sibirev, N. V., Fedorov, V. V., Kirilenko, D. A., Ubiyvovk, E. V., Berdnikov, Y. S., Bolshakov, A. D. & Mukhin, I. S., 2020, In: Semiconductors. 54, 13, p. 1862-1865

    Research output: Contribution to journal › Conference article › peer-review

  6. 2019

  7. The model for in-plane and out-of-plane growth regimes of semiconductor nanowires

    Berdnikov, Y., Sibirev, N. V., Reznik, R. R. & Redkov, A. V., 20 Dec 2019, In: Journal of Physics: Conference Series. 1410, 1, 012049.

    Research output: Contribution to journal › Conference article › peer-review

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ID: 70430162