Research output: Contribution to journal › Article › peer-review
The effect of elastic stresses on the Ga(As, P) crystalline phase of nanowires is studied. It is shown that the elastic stresses can lead to the stable growth of whisker nanocrystals in the metastable phase. The possibility of crystal-phase switching inside a GaP nanowire after the appearance of a Ga(As, P) insert is described.
Original language | English |
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Pages (from-to) | 1320-1324 |
Number of pages | 5 |
Journal | Semiconductors |
Volume | 54 |
Issue number | 10 |
DOIs | |
State | Published - 1 Oct 2020 |
ID: 70874789