The effect of elastic stresses on the Ga(As, P) crystalline phase of nanowires is studied. It is shown that the elastic stresses can lead to the stable growth of whisker nanocrystals in the metastable phase. The possibility of crystal-phase switching inside a GaP nanowire after the appearance of a Ga(As, P) insert is described.

Original languageEnglish
Pages (from-to)1320-1324
Number of pages5
JournalSemiconductors
Volume54
Issue number10
DOIs
StatePublished - 1 Oct 2020

    Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

    Research areas

  • crystalline nanowires, gallium phosphide, polytypism, wurtzite, GROWTH, INP, ABRUPT, STRESS, GAAS, WURTZITE

ID: 70874789