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  1. 1979

  2. EFFECT OF FLUORIDE IONS ON THE PROPERTIES OF AN SI-SiO2 STRUCTURE.

    Tarantov, Y. A., Baraban, A. P. & Konorov, P. P., 1 Jan 1979, In: Soviet Microelectronics (English Translation of Mikroelektronika). 8, 2, p. 136-137 2 p.

    Research output: Contribution to journal › Article › peer-review

  3. EFFECT OF THE POTENTIAL BARRIER SHAPE ON HOLE TRANSPORT IN A SURFACE INVERSION CHANNEL.

    Romanov, O. V. & Yafyasov, A. M., 1 Jan 1979, In: Soviet Microelectronics (English Translation of Mikroelektronika). 8, 3, p. 198-202 5 p.

    Research output: Contribution to journal › Article › peer-review

  4. FEATURES OF THE RELAXATION OF THE NONEQUILIBRIUM CAPACITANCE OF Si-SiO2 STRUCTURES IN INTENSE ELECTRIC FIELDS.

    Baraban, A. P. & Tarantov, Y. A., 1 Jan 1979, In: Soviet Microelectronics (English Translation of Mikroelektronika). 8, 4, p. 285-286 2 p.

    Research output: Contribution to journal › Article › peer-review

  5. 1976

  6. INFLUENCE OF ION IMPLANTATION ON SURFACE TRANSPORT OF CARRIERS IN SILICON.

    Romanov, O. V., Uritskii, V. Y. & Yafyasov, A. M., 1976, In: Sov Phys Semicond. 10, 2, p. 198-201 4 p.

    Research output: Contribution to journal › Article › peer-review

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