X-Ray Reflectometry Study of the State of the Surface Layer of Polished Silicon Substrates Depending on the Methods of Their Cleaning

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X-Ray Reflectometry Study of the State of the Surface Layer of Polished Silicon Substrates Depending on the Methods of Their Cleaning. / Volkovsky, Yu A.; Seregin, A. Yu; Folomeshkin, M. S.; Prosekov, P. A.; Pavlyuk, M. D.; Pisarevsky, Yu V.; Blagov, A. E.; Kovalchuk, M. V.

в: Journal of Surface Investigation, Том 15, № 5, 01.09.2021, стр. 927-933.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Author

Volkovsky, Yu A. ; Seregin, A. Yu ; Folomeshkin, M. S. ; Prosekov, P. A. ; Pavlyuk, M. D. ; Pisarevsky, Yu V. ; Blagov, A. E. ; Kovalchuk, M. V. / X-Ray Reflectometry Study of the State of the Surface Layer of Polished Silicon Substrates Depending on the Methods of Their Cleaning. в: Journal of Surface Investigation. 2021 ; Том 15, № 5. стр. 927-933.

BibTeX

@article{075121ced3f14a1ea64a426c39b6949a,

title = "X-Ray Reflectometry Study of the State of the Surface Layer of Polished Silicon Substrates Depending on the Methods of Their Cleaning",

abstract = "Abstract: The state of the surface layer of polished silicon substrates and the effect of surface-cleaning procedures, such as washing in an ultrasonic bath, etching, and vacuum annealing, is studied. The X-ray reflectivity technique is used to determine the root-mean-square (rms) roughness, thickness, and density of the damaged surface layer. It is shown that the substrates have a damaged surface layer 1.5 nm thick, which is most pronounced after annealing at 350°С. Based on the etching procedures and subsequent vacuum annealing, an approach is proposed for cleaning the surface from contaminants, the damaged layer, and obtaining substrates with a root-mean-square roughness of σz = 0.42 nm. This approach can be used, in particular, for the deposition of thin organic films.",

keywords = "annealing, damaged layer, roughness, silicon substrate, surface, X-ray reflectivity, WAFERS, REFLECTIVITY, PROTEIN, LANGMUIR, FILMS, DIFFRACTION, FABRICATION",

author = "Volkovsky, {Yu A.} and Seregin, {A. Yu} and Folomeshkin, {M. S.} and Prosekov, {P. A.} and Pavlyuk, {M. D.} and Pisarevsky, {Yu V.} and Blagov, {A. E.} and Kovalchuk, {M. V.}",

note = "Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

year = "2021",

month = sep,

day = "1",

doi = "10.1134/s1027451021050207",

language = "English",

volume = "15",

pages = "927--933",

journal = "ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ",

issn = "1027-4510",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "5",

}

RIS

TY - JOUR

T1 - X-Ray Reflectometry Study of the State of the Surface Layer of Polished Silicon Substrates Depending on the Methods of Their Cleaning

AU - Volkovsky, Yu A.

AU - Seregin, A. Yu

AU - Folomeshkin, M. S.

AU - Prosekov, P. A.

AU - Pavlyuk, M. D.

AU - Pisarevsky, Yu V.

AU - Blagov, A. E.

AU - Kovalchuk, M. V.

PY - 2021/9/1

Y1 - 2021/9/1

N2 - Abstract: The state of the surface layer of polished silicon substrates and the effect of surface-cleaning procedures, such as washing in an ultrasonic bath, etching, and vacuum annealing, is studied. The X-ray reflectivity technique is used to determine the root-mean-square (rms) roughness, thickness, and density of the damaged surface layer. It is shown that the substrates have a damaged surface layer 1.5 nm thick, which is most pronounced after annealing at 350°С. Based on the etching procedures and subsequent vacuum annealing, an approach is proposed for cleaning the surface from contaminants, the damaged layer, and obtaining substrates with a root-mean-square roughness of σz = 0.42 nm. This approach can be used, in particular, for the deposition of thin organic films.

AB - Abstract: The state of the surface layer of polished silicon substrates and the effect of surface-cleaning procedures, such as washing in an ultrasonic bath, etching, and vacuum annealing, is studied. The X-ray reflectivity technique is used to determine the root-mean-square (rms) roughness, thickness, and density of the damaged surface layer. It is shown that the substrates have a damaged surface layer 1.5 nm thick, which is most pronounced after annealing at 350°С. Based on the etching procedures and subsequent vacuum annealing, an approach is proposed for cleaning the surface from contaminants, the damaged layer, and obtaining substrates with a root-mean-square roughness of σz = 0.42 nm. This approach can be used, in particular, for the deposition of thin organic films.

KW - annealing

KW - damaged layer

KW - roughness

KW - silicon substrate

KW - surface

KW - X-ray reflectivity

KW - WAFERS

KW - REFLECTIVITY

KW - PROTEIN

KW - LANGMUIR

KW - FILMS

KW - DIFFRACTION

KW - FABRICATION

UR - http://www.scopus.com/inward/record.url?scp=85117606591&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/e17335f5-dacf-389a-bc77-f7a80a6fdcde/

U2 - 10.1134/s1027451021050207

DO - 10.1134/s1027451021050207

M3 - Article

AN - SCOPUS:85117606591

VL - 15

SP - 927

EP - 933

JO - ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ

JF - ПОВЕРХНОСТЬ. РЕНТГЕНОВСКИЕ, СИНХРОТРОННЫЕ И НЕЙТРОННЫЕ ИССЛЕДОВАНИЯ

SN - 1027-4510

IS - 5

ER -

ID: 88194621