Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
X-ray beam induced current/microprobe x-ray fluorescence : Synchrotron radiation based x-ray microprobe techniques for analysis of the recombination activity and chemical nature of metal impurities in silicon. / Vyvenko, O. F.; Buonassisi, T.; Istratov, A. A.; Weber, E. R.
в: Journal of Physics Condensed Matter, Том 16, № 2, 21.01.2004, стр. S141-S151.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - X-ray beam induced current/microprobe x-ray fluorescence
T2 - Synchrotron radiation based x-ray microprobe techniques for analysis of the recombination activity and chemical nature of metal impurities in silicon
AU - Vyvenko, O. F.
AU - Buonassisi, T.
AU - Istratov, A. A.
AU - Weber, E. R.
PY - 2004/1/21
Y1 - 2004/1/21
N2 - In this study we report applications of the synchrotron radiation based x-ray microprobe techniques, x-ray beam induced current (XBIC) and microprobe x-ray fluorescence (μ-XRF), to the analysis of the recombination activity and spatial distribution of transition metals in silicon. A combination of these two techniques enables one to study the elemental nature of defects and impurities and their recombination activity in situ and to map metal clusters with a micron-scale resolution. The correspondence between XBIC data and the data obtained by conventional recombination-sensitive mapping techniques such as electron beam induced current and laser beam induced current is demonstrated. An approach that allows determination of the depth of metal precipitates from several XBIC/μ-XRF images taken for different sample orientations is suggested and is experimentally demonstrated.
AB - In this study we report applications of the synchrotron radiation based x-ray microprobe techniques, x-ray beam induced current (XBIC) and microprobe x-ray fluorescence (μ-XRF), to the analysis of the recombination activity and spatial distribution of transition metals in silicon. A combination of these two techniques enables one to study the elemental nature of defects and impurities and their recombination activity in situ and to map metal clusters with a micron-scale resolution. The correspondence between XBIC data and the data obtained by conventional recombination-sensitive mapping techniques such as electron beam induced current and laser beam induced current is demonstrated. An approach that allows determination of the depth of metal precipitates from several XBIC/μ-XRF images taken for different sample orientations is suggested and is experimentally demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0442326585&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/16/2/017
DO - 10.1088/0953-8984/16/2/017
M3 - Article
AN - SCOPUS:0442326585
VL - 16
SP - S141-S151
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 2
ER -
ID: 87814354