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X-ray beam induced current/microprobe x-ray fluorescence : Synchrotron radiation based x-ray microprobe techniques for analysis of the recombination activity and chemical nature of metal impurities in silicon. / Vyvenko, O. F.; Buonassisi, T.; Istratov, A. A.; Weber, E. R.

в: Journal of Physics Condensed Matter, Том 16, № 2, 21.01.2004, стр. S141-S151.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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@article{03cfd96d88e240dab3ed5ad13d45f6ae,
title = "X-ray beam induced current/microprobe x-ray fluorescence: Synchrotron radiation based x-ray microprobe techniques for analysis of the recombination activity and chemical nature of metal impurities in silicon",
abstract = "In this study we report applications of the synchrotron radiation based x-ray microprobe techniques, x-ray beam induced current (XBIC) and microprobe x-ray fluorescence (μ-XRF), to the analysis of the recombination activity and spatial distribution of transition metals in silicon. A combination of these two techniques enables one to study the elemental nature of defects and impurities and their recombination activity in situ and to map metal clusters with a micron-scale resolution. The correspondence between XBIC data and the data obtained by conventional recombination-sensitive mapping techniques such as electron beam induced current and laser beam induced current is demonstrated. An approach that allows determination of the depth of metal precipitates from several XBIC/μ-XRF images taken for different sample orientations is suggested and is experimentally demonstrated.",
author = "Vyvenko, {O. F.} and T. Buonassisi and Istratov, {A. A.} and Weber, {E. R.}",
year = "2004",
month = jan,
day = "21",
doi = "10.1088/0953-8984/16/2/017",
language = "English",
volume = "16",
pages = "S141--S151",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "2",

}

RIS

TY - JOUR

T1 - X-ray beam induced current/microprobe x-ray fluorescence

T2 - Synchrotron radiation based x-ray microprobe techniques for analysis of the recombination activity and chemical nature of metal impurities in silicon

AU - Vyvenko, O. F.

AU - Buonassisi, T.

AU - Istratov, A. A.

AU - Weber, E. R.

PY - 2004/1/21

Y1 - 2004/1/21

N2 - In this study we report applications of the synchrotron radiation based x-ray microprobe techniques, x-ray beam induced current (XBIC) and microprobe x-ray fluorescence (μ-XRF), to the analysis of the recombination activity and spatial distribution of transition metals in silicon. A combination of these two techniques enables one to study the elemental nature of defects and impurities and their recombination activity in situ and to map metal clusters with a micron-scale resolution. The correspondence between XBIC data and the data obtained by conventional recombination-sensitive mapping techniques such as electron beam induced current and laser beam induced current is demonstrated. An approach that allows determination of the depth of metal precipitates from several XBIC/μ-XRF images taken for different sample orientations is suggested and is experimentally demonstrated.

AB - In this study we report applications of the synchrotron radiation based x-ray microprobe techniques, x-ray beam induced current (XBIC) and microprobe x-ray fluorescence (μ-XRF), to the analysis of the recombination activity and spatial distribution of transition metals in silicon. A combination of these two techniques enables one to study the elemental nature of defects and impurities and their recombination activity in situ and to map metal clusters with a micron-scale resolution. The correspondence between XBIC data and the data obtained by conventional recombination-sensitive mapping techniques such as electron beam induced current and laser beam induced current is demonstrated. An approach that allows determination of the depth of metal precipitates from several XBIC/μ-XRF images taken for different sample orientations is suggested and is experimentally demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0442326585&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/16/2/017

DO - 10.1088/0953-8984/16/2/017

M3 - Article

AN - SCOPUS:0442326585

VL - 16

SP - S141-S151

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 2

ER -

ID: 87814354