TY - JOUR

T1 - Valence instability in the bulk and at the surface of the antiferromagnet SmRh2Si2

AU - Chikina, A.

AU - Generalov, A.

AU - Kummer, K.

AU - Guettler, M.

AU - Antonov, V. N.

AU - Kucherenko, Yu.

AU - Kliemt, K.

AU - Krellner, C.

AU - Danzenbaecher, S.

AU - Kim, T.

AU - Dudin, P.

AU - Geibel, C.

AU - Laubschat, C.

AU - Vyalikh, D. V.

PY - 2017/4/17

Y1 - 2017/4/17

N2 - Using resonant angle-resolved photoemission spectroscopy and electron band-structure calculations, we explore the electronic structure and properties of Sm atoms at the surface and in the bulk of the antiferromagnet SmRh2Si2. We show that the Sm atoms reveal weak mixed-valent behavior both in the bulk and at the surface. Although trivalent 4 f emission strongly dominates, a small divalent 4 f signal near the Fermi energy can be clearly resolved for surface and bulk Sm atoms. This behavior is quite different to most other Sm-based materials which typically experience a surface valence transition to a divalent state of Sm atoms at the surface. This phenomenon is explained in analogy to the isostructural Ce compound, where strong 4 f hybridization stabilizes mixed-valent ground state both in the bulk and at the surface, and which were described in the light of the single-impurity Anderson model. Implications for other RERh2Si2 (RE = rare-earth elements) compounds are discussed.

AB - Using resonant angle-resolved photoemission spectroscopy and electron band-structure calculations, we explore the electronic structure and properties of Sm atoms at the surface and in the bulk of the antiferromagnet SmRh2Si2. We show that the Sm atoms reveal weak mixed-valent behavior both in the bulk and at the surface. Although trivalent 4 f emission strongly dominates, a small divalent 4 f signal near the Fermi energy can be clearly resolved for surface and bulk Sm atoms. This behavior is quite different to most other Sm-based materials which typically experience a surface valence transition to a divalent state of Sm atoms at the surface. This phenomenon is explained in analogy to the isostructural Ce compound, where strong 4 f hybridization stabilizes mixed-valent ground state both in the bulk and at the surface, and which were described in the light of the single-impurity Anderson model. Implications for other RERh2Si2 (RE = rare-earth elements) compounds are discussed.

KW - RARE-EARTH-METALS

KW - ELECTRONIC-STRUCTURE

KW - SAMARIUM HEXABORIDE

KW - BAND THEORY

KW - 4F

KW - SMB6

KW - ELECTRONEGATIVITY

KW - PHOTOEMISSION

KW - GDRH2SI2

KW - SPECTRA

U2 - 10.1103/PhysRevB.95.155127

DO - 10.1103/PhysRevB.95.155127

M3 - статья

VL - 95

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 15

M1 - 155127

ER -