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Unusual behavior of dislocations freshly-introduced under Schottky contact in GaN. / Medvedev, O. S.; Vyvenko, O. F.; Katrushenko, M. V.N.

в: Journal of Physics: Conference Series, Том 1190, № 1, 012008, 23.05.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья в журнале по материалам конференции › Рецензирование

Harvard

Medvedev, OS, Vyvenko, OF & Katrushenko, MVN 2019, 'Unusual behavior of dislocations freshly-introduced under Schottky contact in GaN', Journal of Physics: Conference Series, Том. 1190, № 1, 012008. https://doi.org/10.1088/1742-6596/1190/1/012008

APA

Medvedev, O. S., Vyvenko, O. F., & Katrushenko, M. V. N. (2019). Unusual behavior of dislocations freshly-introduced under Schottky contact in GaN. Journal of Physics: Conference Series, 1190(1), [012008]. https://doi.org/10.1088/1742-6596/1190/1/012008

Vancouver

Medvedev OS, Vyvenko OF, Katrushenko MVN. Unusual behavior of dislocations freshly-introduced under Schottky contact in GaN. Journal of Physics: Conference Series. 2019 Май 23;1190(1). 012008. https://doi.org/10.1088/1742-6596/1190/1/012008

Author

Medvedev, O. S. ; Vyvenko, O. F. ; Katrushenko, M. V.N. / Unusual behavior of dislocations freshly-introduced under Schottky contact in GaN. в: Journal of Physics: Conference Series. 2019 ; Том 1190, № 1.

BibTeX

@article{2f84df61b3f6472d88eb1292b9056afd,
title = "Unusual behavior of dislocations freshly-introduced under Schottky contact in GaN",
abstract = "The impact of the dislocations introduced by local plastic deformation on the electric properties of low-ohmic n-GaN was investigated. It was found that the freshly introduced dislocations gave rise to increase of the dc leakage current, to changes in frequency dependence and in the shape of current-voltage, ac conductance and capacitance voltage characteristics of stripe-like Au-Schottky diodes. Besides, a rapid recovery of the dislocation-induced changes of the electric properties to their initial state was observed after several hours at room temperature indicating the impact of the presence of depletion region of Schottky diodes on the dynamic properties of freshly introduced dislocations.",
keywords = "A-SCREW DISLOCATIONS, LUMINESCENCE",
author = "Medvedev, {O. S.} and Vyvenko, {O. F.} and Katrushenko, {M. V.N.}",
year = "2019",
month = may,
day = "23",
doi = "10.1088/1742-6596/1190/1/012008",
language = "English",
volume = "1190",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "19th International Conference on Extended Defects in Semiconductors, EDS 2018 ; Conference date: 24-06-2018 Through 29-06-2018",

}

RIS

TY - JOUR

T1 - Unusual behavior of dislocations freshly-introduced under Schottky contact in GaN

AU - Medvedev, O. S.

AU - Vyvenko, O. F.

AU - Katrushenko, M. V.N.

PY - 2019/5/23

Y1 - 2019/5/23

N2 - The impact of the dislocations introduced by local plastic deformation on the electric properties of low-ohmic n-GaN was investigated. It was found that the freshly introduced dislocations gave rise to increase of the dc leakage current, to changes in frequency dependence and in the shape of current-voltage, ac conductance and capacitance voltage characteristics of stripe-like Au-Schottky diodes. Besides, a rapid recovery of the dislocation-induced changes of the electric properties to their initial state was observed after several hours at room temperature indicating the impact of the presence of depletion region of Schottky diodes on the dynamic properties of freshly introduced dislocations.

AB - The impact of the dislocations introduced by local plastic deformation on the electric properties of low-ohmic n-GaN was investigated. It was found that the freshly introduced dislocations gave rise to increase of the dc leakage current, to changes in frequency dependence and in the shape of current-voltage, ac conductance and capacitance voltage characteristics of stripe-like Au-Schottky diodes. Besides, a rapid recovery of the dislocation-induced changes of the electric properties to their initial state was observed after several hours at room temperature indicating the impact of the presence of depletion region of Schottky diodes on the dynamic properties of freshly introduced dislocations.

KW - A-SCREW DISLOCATIONS

KW - LUMINESCENCE

UR - http://www.scopus.com/inward/record.url?scp=85067054888&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1190/1/012008

DO - 10.1088/1742-6596/1190/1/012008

M3 - Conference article

AN - SCOPUS:85067054888

VL - 1190

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012008

T2 - 19th International Conference on Extended Defects in Semiconductors, EDS 2018

Y2 - 24 June 2018 through 29 June 2018

ER -

ID: 43711819