TY - JOUR

T1 - Unoccupied electronic band structure of conjugated molecular films interfacing polycrystalline gold surface

AU - Komolov, A

AU - Moller, PJ

PY - 2005/5/15

Y1 - 2005/5/15

N2 - Thin films of Cu-phthalocyanine (CuPc) and of tri-oligo(phenylene-vinylene) end terminated by di-butyl-thiole (tOPV) were thermally deposited in situ in UHV on polycrystalline An substrate surfaces. The surface potential, the surface work function and the structure of density of unoccupied electron states (DOUS) located 5-25 eV above the Fermi level (E-F) were monitored during the film deposition, using an incident beam of low-energy electrons according to the total current electron spectroscopy (TCS) method. Auger electron spectroscopy (AES) was used to monitor atomic composition of the surfaces under study. The deposition of the CuPc films resulted in formation of the DOUS structure typical for these films while the deposition of tOPV films of less than 2 nm thickness resulted in formation of an intermediate DOUS structure which was replaced by a stable DOUS of tOPV along with a further increase of the deposit thickness. The electronic work function of the CuPc and the tOPV films changed during the film deposition until it reached a stable value of 4.4 +/- 0.1 and 4.3 +/- 0.1 eV, respectively, at a film thickness of 810 nm. The width of the interface dipole layer in the CuPc and the tOPV films interfacing with the An surface did not exceed 2 nm. Analysis of the TCS data allowed us to assign the major DOUS features of the CuPc and tOPV films under study. (c) 2004 Elsevier B.V. All rights reserved.

AB - Thin films of Cu-phthalocyanine (CuPc) and of tri-oligo(phenylene-vinylene) end terminated by di-butyl-thiole (tOPV) were thermally deposited in situ in UHV on polycrystalline An substrate surfaces. The surface potential, the surface work function and the structure of density of unoccupied electron states (DOUS) located 5-25 eV above the Fermi level (E-F) were monitored during the film deposition, using an incident beam of low-energy electrons according to the total current electron spectroscopy (TCS) method. Auger electron spectroscopy (AES) was used to monitor atomic composition of the surfaces under study. The deposition of the CuPc films resulted in formation of the DOUS structure typical for these films while the deposition of tOPV films of less than 2 nm thickness resulted in formation of an intermediate DOUS structure which was replaced by a stable DOUS of tOPV along with a further increase of the deposit thickness. The electronic work function of the CuPc and the tOPV films changed during the film deposition until it reached a stable value of 4.4 +/- 0.1 and 4.3 +/- 0.1 eV, respectively, at a film thickness of 810 nm. The width of the interface dipole layer in the CuPc and the tOPV films interfacing with the An surface did not exceed 2 nm. Analysis of the TCS data allowed us to assign the major DOUS features of the CuPc and tOPV films under study. (c) 2004 Elsevier B.V. All rights reserved.

KW - surface electronic phenomena

KW - electron-solid scattering and transmission elastic

KW - surface chemical reaction

KW - metal-organic semiconductor interfaces

KW - Cu-phthalocyanine

KW - TARGET CURRENT SPECTROSCOPY

KW - CU-PHTHALOCYANINE FILMS

KW - COPPER PHTHALOCYANINE

KW - OLIGO(PHENYLENEVINYLENE)S

KW - GRAPHITE

KW - POLYMERS

U2 - 10.1016/j.apsusc.2004.10.122

DO - 10.1016/j.apsusc.2004.10.122

M3 - статья

VL - 244

SP - 573

EP - 577

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

Y2 - 21 June 2004 through 25 June 2004

ER -