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Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. / Gruverman, A.; Wu, D.; Lu, H.; Wang, Y.; Jang, H. W.; Folkman, C. M.; Zhuravlev, M. Ye; Felker, D.; Rzchowski, M.; Eom, C. B.; Tsymbal, E. Y.

в: Nano Letters, Том 9, № 10, 14.10.2009, стр. 3539-3543.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gruverman, A, Wu, D, Lu, H, Wang, Y, Jang, HW, Folkman, CM, Zhuravlev, MY, Felker, D, Rzchowski, M, Eom, CB & Tsymbal, EY 2009, 'Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale', Nano Letters, Том. 9, № 10, стр. 3539-3543. https://doi.org/10.1021/nl901754t

APA

Gruverman, A., Wu, D., Lu, H., Wang, Y., Jang, H. W., Folkman, C. M., Zhuravlev, M. Y., Felker, D., Rzchowski, M., Eom, C. B., & Tsymbal, E. Y. (2009). Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. Nano Letters, 9(10), 3539-3543. https://doi.org/10.1021/nl901754t

Vancouver

Gruverman A, Wu D, Lu H, Wang Y, Jang HW, Folkman CM и пр. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. Nano Letters. 2009 Окт. 14;9(10):3539-3543. https://doi.org/10.1021/nl901754t

Author

Gruverman, A. ; Wu, D. ; Lu, H. ; Wang, Y. ; Jang, H. W. ; Folkman, C. M. ; Zhuravlev, M. Ye ; Felker, D. ; Rzchowski, M. ; Eom, C. B. ; Tsymbal, E. Y. / Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. в: Nano Letters. 2009 ; Том 9, № 10. стр. 3539-3543.

BibTeX

@article{800d4c460e494c9b98c582054d1a6a92,
title = "Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale",
abstract = "Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO3 single-crystalline thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change In resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions In nonvolatile memory and logic devices.",
author = "A. Gruverman and D. Wu and H. Lu and Y. Wang and Jang, {H. W.} and Folkman, {C. M.} and Zhuravlev, {M. Ye} and D. Felker and M. Rzchowski and Eom, {C. B.} and Tsymbal, {E. Y.}",
year = "2009",
month = oct,
day = "14",
doi = "10.1021/nl901754t",
language = "English",
volume = "9",
pages = "3539--3543",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "10",

}

RIS

TY - JOUR

T1 - Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale

AU - Gruverman, A.

AU - Wu, D.

AU - Lu, H.

AU - Wang, Y.

AU - Jang, H. W.

AU - Folkman, C. M.

AU - Zhuravlev, M. Ye

AU - Felker, D.

AU - Rzchowski, M.

AU - Eom, C. B.

AU - Tsymbal, E. Y.

PY - 2009/10/14

Y1 - 2009/10/14

N2 - Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO3 single-crystalline thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change In resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions In nonvolatile memory and logic devices.

AB - Using a set of scanning probe microscopy techniques, we demonstrate the reproducible tunneling electroresistance effect on nanometer-thick epitaxial BaTiO3 single-crystalline thin films on SrRuO3 bottom electrodes. Correlation between ferroelectric and electronic transport properties is established by direct nanoscale visualization and control of polarization and tunneling current. The obtained results show a change In resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature. These results are promising for employing ferroelectric tunnel junctions In nonvolatile memory and logic devices.

UR - http://www.scopus.com/inward/record.url?scp=72849138482&partnerID=8YFLogxK

U2 - 10.1021/nl901754t

DO - 10.1021/nl901754t

M3 - Article

AN - SCOPUS:72849138482

VL - 9

SP - 3539

EP - 3543

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 10

ER -

ID: 97807248