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Tuning luminescence properties of hexagonal boron nitride with focused helium ion beam. / Петров, Юрий Владимирович; Гогина, Ольга Андреевна; Вывенко, Олег Федорович; Шаров, Тарас Владимирович; Борисов, Евгений Вадимович; Прокудина, Мария; Шевчун, Артем.

в: Physica B: Condensed Matter, Том 695, 416588, 01.12.2024.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Петров, ЮВ, Гогина, ОА, Вывенко, ОФ, Шаров, ТВ, Борисов, ЕВ, Прокудина, М & Шевчун, А 2024, 'Tuning luminescence properties of hexagonal boron nitride with focused helium ion beam', Physica B: Condensed Matter, Том. 695, 416588. https://doi.org/10.1016/j.physb.2024.416588

APA

Петров, Ю. В., Гогина, О. А., Вывенко, О. Ф., Шаров, Т. В., Борисов, Е. В., Прокудина, М., & Шевчун, А. (2024). Tuning luminescence properties of hexagonal boron nitride with focused helium ion beam. Physica B: Condensed Matter, 695, [416588]. https://doi.org/10.1016/j.physb.2024.416588

Vancouver

Петров ЮВ, Гогина ОА, Вывенко ОФ, Шаров ТВ, Борисов ЕВ, Прокудина М и пр. Tuning luminescence properties of hexagonal boron nitride with focused helium ion beam. Physica B: Condensed Matter. 2024 Дек. 1;695. 416588. https://doi.org/10.1016/j.physb.2024.416588

Author

Петров, Юрий Владимирович ; Гогина, Ольга Андреевна ; Вывенко, Олег Федорович ; Шаров, Тарас Владимирович ; Борисов, Евгений Вадимович ; Прокудина, Мария ; Шевчун, Артем. / Tuning luminescence properties of hexagonal boron nitride with focused helium ion beam. в: Physica B: Condensed Matter. 2024 ; Том 695.

BibTeX

@article{c5d90afc62374cd29f626db91c5e4bf6,
title = "Tuning luminescence properties of hexagonal boron nitride with focused helium ion beam",
abstract = "Numerous diverse grown-in point defects in hexagonal boron nitride exhibit properties of single photon emitters stimulating the development of controllable methods for their local formation. In this work the defects created in hexagonal boron nitride by helium ion irradiation were investigated by means of cathodoluminescence and Raman spectroscopy. The irradiation with ion fluence above 1015 cm−2 resulted in a new Raman spectral band at about 1295 cm−1, which can be attributed to the formation of vacancies or divacancies. The intensity of the defect-related luminescence was found to vary non-monotonically with ion fluence and possessed a maximum at about 1014 cm−2. On the basis of this result a new procedure to fabricate light emitting discs by means of the focused helium ion beam was suggested and demonstrated.",
keywords = "Cathodoluminescence, Hexagonal boron nitride, Raman spectroscopy, helium ion microscope",
author = "Петров, {Юрий Владимирович} and Гогина, {Ольга Андреевна} and Вывенко, {Олег Федорович} and Шаров, {Тарас Владимирович} and Борисов, {Евгений Вадимович} and Мария Прокудина and Артем Шевчун",
year = "2024",
month = dec,
day = "1",
doi = "10.1016/j.physb.2024.416588",
language = "English",
volume = "695",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Tuning luminescence properties of hexagonal boron nitride with focused helium ion beam

AU - Петров, Юрий Владимирович

AU - Гогина, Ольга Андреевна

AU - Вывенко, Олег Федорович

AU - Шаров, Тарас Владимирович

AU - Борисов, Евгений Вадимович

AU - Прокудина, Мария

AU - Шевчун, Артем

PY - 2024/12/1

Y1 - 2024/12/1

N2 - Numerous diverse grown-in point defects in hexagonal boron nitride exhibit properties of single photon emitters stimulating the development of controllable methods for their local formation. In this work the defects created in hexagonal boron nitride by helium ion irradiation were investigated by means of cathodoluminescence and Raman spectroscopy. The irradiation with ion fluence above 1015 cm−2 resulted in a new Raman spectral band at about 1295 cm−1, which can be attributed to the formation of vacancies or divacancies. The intensity of the defect-related luminescence was found to vary non-monotonically with ion fluence and possessed a maximum at about 1014 cm−2. On the basis of this result a new procedure to fabricate light emitting discs by means of the focused helium ion beam was suggested and demonstrated.

AB - Numerous diverse grown-in point defects in hexagonal boron nitride exhibit properties of single photon emitters stimulating the development of controllable methods for their local formation. In this work the defects created in hexagonal boron nitride by helium ion irradiation were investigated by means of cathodoluminescence and Raman spectroscopy. The irradiation with ion fluence above 1015 cm−2 resulted in a new Raman spectral band at about 1295 cm−1, which can be attributed to the formation of vacancies or divacancies. The intensity of the defect-related luminescence was found to vary non-monotonically with ion fluence and possessed a maximum at about 1014 cm−2. On the basis of this result a new procedure to fabricate light emitting discs by means of the focused helium ion beam was suggested and demonstrated.

KW - Cathodoluminescence

KW - Hexagonal boron nitride

KW - Raman spectroscopy

KW - helium ion microscope

UR - https://www.mendeley.com/catalogue/3dd72a6f-98ce-383d-8c3d-0c3ec86edead/

U2 - 10.1016/j.physb.2024.416588

DO - 10.1016/j.physb.2024.416588

M3 - Article

VL - 695

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

M1 - 416588

ER -

ID: 126033110