The process of current transfer in a layer of composite material-thermally oxidized silicon micropowder on a silicon substrate-has been studied. A model based on the combination of hopping and tunneling mechanisms of charge transport is proposed. The concentration of charge traps and the mobility of charge carriers are evaluated using the current-voltage characteristics measured at 100 and 300 K in the dark and under illumination. The activation energies and frequency factors of the charge traps are determined.