Standard

Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique. / Schöning, M. J.; Schmidt, C.; Schubert, J.; Zander, W.; Mesters, S.; Kordos, P.; Lüth, H.; Legin, A.; Seleznev, B.; Vlasov, Yu G.

в: Sensors and Actuators, B: Chemical, Том 68, № 1, 25.08.2000, стр. 254-259.

Результаты исследований: Научные публикации в периодических изданияхстатья в журнале по материалам конференцииРецензирование

Harvard

Schöning, MJ, Schmidt, C, Schubert, J, Zander, W, Mesters, S, Kordos, P, Lüth, H, Legin, A, Seleznev, B & Vlasov, YG 2000, 'Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique', Sensors and Actuators, B: Chemical, Том. 68, № 1, стр. 254-259. https://doi.org/10.1016/S0925-4005(00)00438-X

APA

Schöning, M. J., Schmidt, C., Schubert, J., Zander, W., Mesters, S., Kordos, P., Lüth, H., Legin, A., Seleznev, B., & Vlasov, Y. G. (2000). Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique. Sensors and Actuators, B: Chemical, 68(1), 254-259. https://doi.org/10.1016/S0925-4005(00)00438-X

Vancouver

Schöning MJ, Schmidt C, Schubert J, Zander W, Mesters S, Kordos P и пр. Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique. Sensors and Actuators, B: Chemical. 2000 Авг. 25;68(1):254-259. https://doi.org/10.1016/S0925-4005(00)00438-X

Author

Schöning, M. J. ; Schmidt, C. ; Schubert, J. ; Zander, W. ; Mesters, S. ; Kordos, P. ; Lüth, H. ; Legin, A. ; Seleznev, B. ; Vlasov, Yu G. / Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique. в: Sensors and Actuators, B: Chemical. 2000 ; Том 68, № 1. стр. 254-259.

BibTeX

@article{c69e7b0369f34ddca709337000df8dc8,
title = "Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique",
abstract = "Potentiometric thin film sensors on the basis of the two different chalcogenide glass materials Ag-As-S and Cu-Ag-As-Se-Te have been prepared by means of the pulsed laser deposition (PLD) technique onto Si/SiO2 substrates with an additional contact layer of Cr/Au and Ti/Pt, respectively. The physical layer structure and the stoichiometric composition of the deposited glass materials have been investigated by means of Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). Depending on the material systems used, in a conventional 'two-electrodes' measuring set-up, these novel thin film sensors posses a high sensitivity towards lead (23-25 mV/pPb), copper (29-31 mV/pCu), cadmium (23-27 mV/pCd) and silver (about 54 mV/pAg) over a measuring period of more than 60 days. The obtained results are in good accordance when comparing them to measurements performed with conventional bulk ion-selective electrodes, built-up of the same layer composition.",
author = "Sch{\"o}ning, {M. J.} and C. Schmidt and J. Schubert and W. Zander and S. Mesters and P. Kordos and H. L{\"u}th and A. Legin and B. Seleznev and Vlasov, {Yu G.}",
year = "2000",
month = aug,
day = "25",
doi = "10.1016/S0925-4005(00)00438-X",
language = "English",
volume = "68",
pages = "254--259",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1",
note = "Proceedings of Eurosensors XIII ; Conference date: 12-09-1999 Through 15-09-1999",

}

RIS

TY - JOUR

T1 - Thin film sensors on the basis of chalcogenide glass materials prepared by pulsed laser deposition technique

AU - Schöning, M. J.

AU - Schmidt, C.

AU - Schubert, J.

AU - Zander, W.

AU - Mesters, S.

AU - Kordos, P.

AU - Lüth, H.

AU - Legin, A.

AU - Seleznev, B.

AU - Vlasov, Yu G.

PY - 2000/8/25

Y1 - 2000/8/25

N2 - Potentiometric thin film sensors on the basis of the two different chalcogenide glass materials Ag-As-S and Cu-Ag-As-Se-Te have been prepared by means of the pulsed laser deposition (PLD) technique onto Si/SiO2 substrates with an additional contact layer of Cr/Au and Ti/Pt, respectively. The physical layer structure and the stoichiometric composition of the deposited glass materials have been investigated by means of Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). Depending on the material systems used, in a conventional 'two-electrodes' measuring set-up, these novel thin film sensors posses a high sensitivity towards lead (23-25 mV/pPb), copper (29-31 mV/pCu), cadmium (23-27 mV/pCd) and silver (about 54 mV/pAg) over a measuring period of more than 60 days. The obtained results are in good accordance when comparing them to measurements performed with conventional bulk ion-selective electrodes, built-up of the same layer composition.

AB - Potentiometric thin film sensors on the basis of the two different chalcogenide glass materials Ag-As-S and Cu-Ag-As-Se-Te have been prepared by means of the pulsed laser deposition (PLD) technique onto Si/SiO2 substrates with an additional contact layer of Cr/Au and Ti/Pt, respectively. The physical layer structure and the stoichiometric composition of the deposited glass materials have been investigated by means of Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). Depending on the material systems used, in a conventional 'two-electrodes' measuring set-up, these novel thin film sensors posses a high sensitivity towards lead (23-25 mV/pPb), copper (29-31 mV/pCu), cadmium (23-27 mV/pCd) and silver (about 54 mV/pAg) over a measuring period of more than 60 days. The obtained results are in good accordance when comparing them to measurements performed with conventional bulk ion-selective electrodes, built-up of the same layer composition.

UR - http://www.scopus.com/inward/record.url?scp=0342520802&partnerID=8YFLogxK

U2 - 10.1016/S0925-4005(00)00438-X

DO - 10.1016/S0925-4005(00)00438-X

M3 - Conference article

AN - SCOPUS:0342520802

VL - 68

SP - 254

EP - 259

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1

T2 - Proceedings of Eurosensors XIII

Y2 - 12 September 1999 through 15 September 1999

ER -

ID: 30516580