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Thermal stability of DRL in n-GaN. / Medvedev, Oleg; Vyvenko, Oleg; Bondarenko, Anton.

в: Physica Status Solidi (C) Current Topics in Solid State Physics, Том 14, № 7, 1700111, 01.07.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Medvedev, O, Vyvenko, O & Bondarenko, A 2017, 'Thermal stability of DRL in n-GaN', Physica Status Solidi (C) Current Topics in Solid State Physics, Том. 14, № 7, 1700111. https://doi.org/10.1002/pssc.201700111

APA

Medvedev, O., Vyvenko, O., & Bondarenko, A. (2017). Thermal stability of DRL in n-GaN. Physica Status Solidi (C) Current Topics in Solid State Physics, 14(7), [1700111]. https://doi.org/10.1002/pssc.201700111

Vancouver

Medvedev O, Vyvenko O, Bondarenko A. Thermal stability of DRL in n-GaN. Physica Status Solidi (C) Current Topics in Solid State Physics. 2017 Июль 1;14(7). 1700111. https://doi.org/10.1002/pssc.201700111

Author

Medvedev, Oleg ; Vyvenko, Oleg ; Bondarenko, Anton. / Thermal stability of DRL in n-GaN. в: Physica Status Solidi (C) Current Topics in Solid State Physics. 2017 ; Том 14, № 7.

BibTeX

@article{04f2fb46220c462cb40c09202f51c85f,
title = "Thermal stability of DRL in n-GaN",
abstract = "Impact of stepwise annealing in the temperature ranges 300–750 K in vacuum chamber of scanning electron microscope on the cathodoluminescence of freshly introduced a-screw dislocations in low-ohmic GaN was investigated. Dislocation related luminescence (DRL) exhibits wide intense band at energy of about 3.12 eV at the room temperature and exceed an intensity of the near band edge emission. DRL intensity decreases with the temperature increase but remains detectable up to 450 K. Annealing at the temperatures up to 500 K does not change significantly structure of dislocations introduced at room temperature, while after the treatments at higher temperatures of up to 750 K the dislocations expand their length remaining in basal plane. The treatments however do not change DRL optical properties of the individual dislocations after cool down to room temperature.",
keywords = "cathodoluminescence, dislocation related luminescence, GaN",
author = "Oleg Medvedev and Oleg Vyvenko and Anton Bondarenko",
year = "2017",
month = jul,
day = "1",
doi = "10.1002/pssc.201700111",
language = "English",
volume = "14",
journal = "Physica Status Solidi C: Conferences",
issn = "1862-6351",
publisher = "Wiley-Blackwell",
number = "7",

}

RIS

TY - JOUR

T1 - Thermal stability of DRL in n-GaN

AU - Medvedev, Oleg

AU - Vyvenko, Oleg

AU - Bondarenko, Anton

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Impact of stepwise annealing in the temperature ranges 300–750 K in vacuum chamber of scanning electron microscope on the cathodoluminescence of freshly introduced a-screw dislocations in low-ohmic GaN was investigated. Dislocation related luminescence (DRL) exhibits wide intense band at energy of about 3.12 eV at the room temperature and exceed an intensity of the near band edge emission. DRL intensity decreases with the temperature increase but remains detectable up to 450 K. Annealing at the temperatures up to 500 K does not change significantly structure of dislocations introduced at room temperature, while after the treatments at higher temperatures of up to 750 K the dislocations expand their length remaining in basal plane. The treatments however do not change DRL optical properties of the individual dislocations after cool down to room temperature.

AB - Impact of stepwise annealing in the temperature ranges 300–750 K in vacuum chamber of scanning electron microscope on the cathodoluminescence of freshly introduced a-screw dislocations in low-ohmic GaN was investigated. Dislocation related luminescence (DRL) exhibits wide intense band at energy of about 3.12 eV at the room temperature and exceed an intensity of the near band edge emission. DRL intensity decreases with the temperature increase but remains detectable up to 450 K. Annealing at the temperatures up to 500 K does not change significantly structure of dislocations introduced at room temperature, while after the treatments at higher temperatures of up to 750 K the dislocations expand their length remaining in basal plane. The treatments however do not change DRL optical properties of the individual dislocations after cool down to room temperature.

KW - cathodoluminescence

KW - dislocation related luminescence

KW - GaN

UR - http://www.scopus.com/inward/record.url?scp=85019936313&partnerID=8YFLogxK

U2 - 10.1002/pssc.201700111

DO - 10.1002/pssc.201700111

M3 - Article

AN - SCOPUS:85019936313

VL - 14

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 7

M1 - 1700111

ER -

ID: 36388186