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Theoretical Study of alpha-V2O5-Based Double-Wall Nanotubes. / Porsev, Vitaly V.; Bandura, Andrei V.; Evarestov, Robert A.

в: Chemphyschem : a European journal of chemical physics and physical chemistry, Том 16, № 14, 2015, стр. 3007-3014.

Результаты исследований: Научные публикации в периодических изданияхстатья

Harvard

Porsev, VV, Bandura, AV & Evarestov, RA 2015, 'Theoretical Study of alpha-V2O5-Based Double-Wall Nanotubes', Chemphyschem : a European journal of chemical physics and physical chemistry, Том. 16, № 14, стр. 3007-3014. https://doi.org/10.1002/cphc.201500354

APA

Porsev, V. V., Bandura, A. V., & Evarestov, R. A. (2015). Theoretical Study of alpha-V2O5-Based Double-Wall Nanotubes. Chemphyschem : a European journal of chemical physics and physical chemistry, 16(14), 3007-3014. https://doi.org/10.1002/cphc.201500354

Vancouver

Porsev VV, Bandura AV, Evarestov RA. Theoretical Study of alpha-V2O5-Based Double-Wall Nanotubes. Chemphyschem : a European journal of chemical physics and physical chemistry. 2015;16(14):3007-3014. https://doi.org/10.1002/cphc.201500354

Author

Porsev, Vitaly V. ; Bandura, Andrei V. ; Evarestov, Robert A. / Theoretical Study of alpha-V2O5-Based Double-Wall Nanotubes. в: Chemphyschem : a European journal of chemical physics and physical chemistry. 2015 ; Том 16, № 14. стр. 3007-3014.

BibTeX

@article{05ee0e616fe6458986f9f2a798e0e809,
title = "Theoretical Study of alpha-V2O5-Based Double-Wall Nanotubes",
abstract = "First-principles calculations of the atomic and electronic structure of double-wall nanotubes (DWNTs) of a-V2O5 are performed. Relaxation of the DWNT structure leads to the formation of two types of local regions: 1) bulk-type regions and 2) puckering regions. Calculated total density of states (DOS) of DWNTs considerably differ from that of single-wall nanotubes and the single layer, as well as from the DOS of the bulk and double layer. Small shoulders that appear on edges of valence and conduction bands result in a considerable decrease in the band gaps of the DWNTs (up to 1 eV relative to the single-layer gaps). The main reason for this effect is the shift of the inner- and outer-wall DOS in opposite directions on the energetic scale. The electron density corresponding to shoulders at the conduction-band edges is localized on vanadium atoms of the bulk-type regions, whereas the electron density corresponding to shoulders at the valence-band edges belongs to oxygen atoms of both regions.",
author = "Porsev, {Vitaly V.} and Bandura, {Andrei V.} and Evarestov, {Robert A.}",
year = "2015",
doi = "10.1002/cphc.201500354",
language = "English",
volume = "16",
pages = "3007--3014",
journal = "Chemphyschem : a European journal of chemical physics and physical chemistry",
issn = "1439-4235",
publisher = "Wiley-Blackwell",
number = "14",

}

RIS

TY - JOUR

T1 - Theoretical Study of alpha-V2O5-Based Double-Wall Nanotubes

AU - Porsev, Vitaly V.

AU - Bandura, Andrei V.

AU - Evarestov, Robert A.

PY - 2015

Y1 - 2015

N2 - First-principles calculations of the atomic and electronic structure of double-wall nanotubes (DWNTs) of a-V2O5 are performed. Relaxation of the DWNT structure leads to the formation of two types of local regions: 1) bulk-type regions and 2) puckering regions. Calculated total density of states (DOS) of DWNTs considerably differ from that of single-wall nanotubes and the single layer, as well as from the DOS of the bulk and double layer. Small shoulders that appear on edges of valence and conduction bands result in a considerable decrease in the band gaps of the DWNTs (up to 1 eV relative to the single-layer gaps). The main reason for this effect is the shift of the inner- and outer-wall DOS in opposite directions on the energetic scale. The electron density corresponding to shoulders at the conduction-band edges is localized on vanadium atoms of the bulk-type regions, whereas the electron density corresponding to shoulders at the valence-band edges belongs to oxygen atoms of both regions.

AB - First-principles calculations of the atomic and electronic structure of double-wall nanotubes (DWNTs) of a-V2O5 are performed. Relaxation of the DWNT structure leads to the formation of two types of local regions: 1) bulk-type regions and 2) puckering regions. Calculated total density of states (DOS) of DWNTs considerably differ from that of single-wall nanotubes and the single layer, as well as from the DOS of the bulk and double layer. Small shoulders that appear on edges of valence and conduction bands result in a considerable decrease in the band gaps of the DWNTs (up to 1 eV relative to the single-layer gaps). The main reason for this effect is the shift of the inner- and outer-wall DOS in opposite directions on the energetic scale. The electron density corresponding to shoulders at the conduction-band edges is localized on vanadium atoms of the bulk-type regions, whereas the electron density corresponding to shoulders at the valence-band edges belongs to oxygen atoms of both regions.

U2 - 10.1002/cphc.201500354

DO - 10.1002/cphc.201500354

M3 - Article

VL - 16

SP - 3007

EP - 3014

JO - Chemphyschem : a European journal of chemical physics and physical chemistry

JF - Chemphyschem : a European journal of chemical physics and physical chemistry

SN - 1439-4235

IS - 14

ER -

ID: 3999580