Результаты исследований: Научные публикации в периодических изданиях › статья
THEORETICAL STUDY OF alpha- AND gamma-V2O5 DOUBLE-WALLED NANOTUBES. / Porsev, V. V.; Bandura, A. V.; Evarestov, R. A.
в: Lithuanian Journal of Physics, Том 56, № 2, 2016.Результаты исследований: Научные публикации в периодических изданиях › статья
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TY - JOUR
T1 - THEORETICAL STUDY OF alpha- AND gamma-V2O5 DOUBLE-WALLED NANOTUBES
AU - Porsev, V. V.
AU - Bandura, A. V.
AU - Evarestov, R. A.
PY - 2016
Y1 - 2016
N2 - The first-principles calculations of the atomic and electronic structure of double-walled nanotubes (DWNTs) of gamma-V2O5 have been performed and the obtained properties have been compared with those of alpha-V2O5 ones. The DWNT structure relaxation leads to the formation of two types of local regions: (1) adhesion regions and (2) puckering regions. Although the structure of adhesion regions of alpha-V2O5 DWNTs is close to the structure of bulk alpha-V2O5, this is not the case for gamma-V2O5 DWNTs. The resulting structure of adhesion regions in gamma-V2O5 SWNTs allows us to assume the existence of hypothetical stable phases, with one of them resembling the experimentally observed R-Nb2O5 and (V0.7Mo0.3)(2)O-5 crystals.
AB - The first-principles calculations of the atomic and electronic structure of double-walled nanotubes (DWNTs) of gamma-V2O5 have been performed and the obtained properties have been compared with those of alpha-V2O5 ones. The DWNT structure relaxation leads to the formation of two types of local regions: (1) adhesion regions and (2) puckering regions. Although the structure of adhesion regions of alpha-V2O5 DWNTs is close to the structure of bulk alpha-V2O5, this is not the case for gamma-V2O5 DWNTs. The resulting structure of adhesion regions in gamma-V2O5 SWNTs allows us to assume the existence of hypothetical stable phases, with one of them resembling the experimentally observed R-Nb2O5 and (V0.7Mo0.3)(2)O-5 crystals.
M3 - Article
VL - 56
JO - Lithuanian Journal of Physics
JF - Lithuanian Journal of Physics
SN - 1648-8504
IS - 2
ER -
ID: 7949855