Standard

Theoretical approach to the single-source precursor concept : Quantum chemical modeling of gas-phase reactions. / Timoshkin, Alexey Y.; Bettinger, Holger F.; Schaefer, Henry F.

в: Journal of Crystal Growth, Том 222, № 1-2, 2001, стр. 170-182.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Timoshkin, AY, Bettinger, HF & Schaefer, HF 2001, 'Theoretical approach to the single-source precursor concept: Quantum chemical modeling of gas-phase reactions', Journal of Crystal Growth, Том. 222, № 1-2, стр. 170-182. https://doi.org/10.1016/S0022-0248(00)00903-9

APA

Timoshkin, A. Y., Bettinger, H. F., & Schaefer, H. F. (2001). Theoretical approach to the single-source precursor concept: Quantum chemical modeling of gas-phase reactions. Journal of Crystal Growth, 222(1-2), 170-182. https://doi.org/10.1016/S0022-0248(00)00903-9

Vancouver

Timoshkin AY, Bettinger HF, Schaefer HF. Theoretical approach to the single-source precursor concept: Quantum chemical modeling of gas-phase reactions. Journal of Crystal Growth. 2001;222(1-2):170-182. https://doi.org/10.1016/S0022-0248(00)00903-9

Author

Timoshkin, Alexey Y. ; Bettinger, Holger F. ; Schaefer, Henry F. / Theoretical approach to the single-source precursor concept : Quantum chemical modeling of gas-phase reactions. в: Journal of Crystal Growth. 2001 ; Том 222, № 1-2. стр. 170-182.

BibTeX

@article{14469fccbdd44996aeee15f11fc63eae,
title = "Theoretical approach to the single-source precursor concept: Quantum chemical modeling of gas-phase reactions",
abstract = "Results of extensive quantum-chemical modeling of the gas-phase reactions during CVD of group 13-15 materials are discussed in the light of single-source precursor concept. Two quantitative parameters (donor-acceptor bond dissociation enthalpy and elimination reaction enthalpy) are introduced as criteria for the classification of potential candidates for the single-source precursors. Hydrogen-containing molecules are predicted to have higher importance as precursors for the stoichiometry-controlled CVD processes. Importance of the ring and cluster single-source precursors in the CVD of doped metal nitrides is emphasized. In contrast, P, As-containing precursors with metal-halide bonds are predicted to be inefficient.",
keywords = "chemical vapor deposition, single-source precursors, quantum chemical modeling, 13-15 materials, donor-acceptor complexes, ring and cluster compounds, VAPOR-DEPOSITION, THERMAL-DECOMPOSITION, STRUCTURAL-CHARACTERIZATION, MOLECULAR-STRUCTURE, SURFACE-CHEMISTRY, ALUMINUM NITRIDE, GALLIUM-ARSENIDE, NANOCRYSTALLINE, TRIMETHYLGALLIUM, CYCLOTRIGALLAZANE",
author = "Timoshkin, {Alexey Y.} and Bettinger, {Holger F.} and Schaefer, {Henry F.}",
year = "2001",
doi = "10.1016/S0022-0248(00)00903-9",
language = "English",
volume = "222",
pages = "170--182",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",

}

RIS

TY - JOUR

T1 - Theoretical approach to the single-source precursor concept

T2 - Quantum chemical modeling of gas-phase reactions

AU - Timoshkin, Alexey Y.

AU - Bettinger, Holger F.

AU - Schaefer, Henry F.

PY - 2001

Y1 - 2001

N2 - Results of extensive quantum-chemical modeling of the gas-phase reactions during CVD of group 13-15 materials are discussed in the light of single-source precursor concept. Two quantitative parameters (donor-acceptor bond dissociation enthalpy and elimination reaction enthalpy) are introduced as criteria for the classification of potential candidates for the single-source precursors. Hydrogen-containing molecules are predicted to have higher importance as precursors for the stoichiometry-controlled CVD processes. Importance of the ring and cluster single-source precursors in the CVD of doped metal nitrides is emphasized. In contrast, P, As-containing precursors with metal-halide bonds are predicted to be inefficient.

AB - Results of extensive quantum-chemical modeling of the gas-phase reactions during CVD of group 13-15 materials are discussed in the light of single-source precursor concept. Two quantitative parameters (donor-acceptor bond dissociation enthalpy and elimination reaction enthalpy) are introduced as criteria for the classification of potential candidates for the single-source precursors. Hydrogen-containing molecules are predicted to have higher importance as precursors for the stoichiometry-controlled CVD processes. Importance of the ring and cluster single-source precursors in the CVD of doped metal nitrides is emphasized. In contrast, P, As-containing precursors with metal-halide bonds are predicted to be inefficient.

KW - chemical vapor deposition

KW - single-source precursors

KW - quantum chemical modeling

KW - 13-15 materials

KW - donor-acceptor complexes

KW - ring and cluster compounds

KW - VAPOR-DEPOSITION

KW - THERMAL-DECOMPOSITION

KW - STRUCTURAL-CHARACTERIZATION

KW - MOLECULAR-STRUCTURE

KW - SURFACE-CHEMISTRY

KW - ALUMINUM NITRIDE

KW - GALLIUM-ARSENIDE

KW - NANOCRYSTALLINE

KW - TRIMETHYLGALLIUM

KW - CYCLOTRIGALLAZANE

UR - http://www.scopus.com/inward/record.url?scp=0035148690&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00903-9

DO - 10.1016/S0022-0248(00)00903-9

M3 - Article

AN - SCOPUS:0035148690

VL - 222

SP - 170

EP - 182

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-2

ER -

ID: 17371347