TY - JOUR

T1 - The microstructure of Ge/Si layers grown at low temperature

AU - Roddatis, V. V.

AU - Vasiliev, A. L.

AU - Kovalchuk, M. V.

PY - 2013

Y1 - 2013

N2 - Multilayer Si/Ge heterostructures with the thickness of Ge layers varying from 2 to 12 monolayers (ML) were formed by molecular beam epitaxy (MBE) on the (001) Si substrates at 300°C (Ge) and 450°C (Si). The study of the Si/Ge heterostructures was performed by transmission and Cs corrected scanning transmission electron microscopy (STEM). It was shown that the growth of Ge layers up to thickness of 5 ML occurs through the Frank-van der Merwe mechanism. For thicker Ge layers the growth mechanism of the Si-Ge heterostructure changes to Stranski-Krastanov with Si-Ge islands having the shape of inverted pyramids. The Si-Ge layer intermixing was discussed.

AB - Multilayer Si/Ge heterostructures with the thickness of Ge layers varying from 2 to 12 monolayers (ML) were formed by molecular beam epitaxy (MBE) on the (001) Si substrates at 300°C (Ge) and 450°C (Si). The study of the Si/Ge heterostructures was performed by transmission and Cs corrected scanning transmission electron microscopy (STEM). It was shown that the growth of Ge layers up to thickness of 5 ML occurs through the Frank-van der Merwe mechanism. For thicker Ge layers the growth mechanism of the Si-Ge heterostructure changes to Stranski-Krastanov with Si-Ge islands having the shape of inverted pyramids. The Si-Ge layer intermixing was discussed.

UR - http://www.scopus.com/inward/record.url?scp=84890644527&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/471/1/012044

DO - 10.1088/1742-6596/471/1/012044

M3 - Conference article

AN - SCOPUS:84890644527

VL - 471

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012044

T2 - 18th Microscopy of Semiconducting Materials Conference, MSM 2013

Y2 - 7 April 2013 through 11 April 2013

ER -