Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
The Mg2NiH4 film on nickel substrate: synthesis, properties and kinetics of formation. / Baraban, A.p.; Chernov, I.a.; Dmitriev, V.a.; Elets, D.i.; Gabis, I.e.; Kuznetsov, V.g.; Voyt, A.p.
в: Thin Solid Films, Том 762, 139556, 30.11.2022.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - The Mg2NiH4 film on nickel substrate: synthesis, properties and kinetics of formation
AU - Baraban, A.p.
AU - Chernov, I.a.
AU - Dmitriev, V.a.
AU - Elets, D.i.
AU - Gabis, I.e.
AU - Kuznetsov, V.g.
AU - Voyt, A.p.
N1 - Publisher Copyright: © 2022 Elsevier B.V.
PY - 2022/11/30
Y1 - 2022/11/30
N2 - We studied the synthesis reaction of Mg 2NiH 4 hydride films when a nickel plate and magnesium hydride powder interacted in the presence of hydrogen at 450 °C. The hydrogen pressure (>6 MPa) was higher than the synthesis equilibrium pressure for both Mg 2NiH 4 and MgH 2 hydrides. Film examination with scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, and thermal desorption spectroscopy methods revealed that a dense polycrystalline film of Mg 2NiH 4 hydride grows on a thin (0.9 μm) underlayer of intermetallic alloy MgNi 2. The synthesis time variation made it possible to create Mg 2NiH 4 films with a width of 0.2 to 4 μm. Based on analysis of the growth kinetics, the crystal structure of the material, and energies of chemical bonds between atoms, we show that the interface between MgNi 2 and Mg 2NiH 4 is the most probable location of the growth reaction. We have obtained cathode luminescence spectra of the Mg 2NiH 4 hydride film. Mg 2NiH 4 is found to be an indirect gap semiconductor with a gap value of ∼1.6 eV. However, luminescence with quanta energy higher than the band gap is registered. We associate this fact with Van Hove singularities in the Mg 2NiH 4 density of states.
AB - We studied the synthesis reaction of Mg 2NiH 4 hydride films when a nickel plate and magnesium hydride powder interacted in the presence of hydrogen at 450 °C. The hydrogen pressure (>6 MPa) was higher than the synthesis equilibrium pressure for both Mg 2NiH 4 and MgH 2 hydrides. Film examination with scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, and thermal desorption spectroscopy methods revealed that a dense polycrystalline film of Mg 2NiH 4 hydride grows on a thin (0.9 μm) underlayer of intermetallic alloy MgNi 2. The synthesis time variation made it possible to create Mg 2NiH 4 films with a width of 0.2 to 4 μm. Based on analysis of the growth kinetics, the crystal structure of the material, and energies of chemical bonds between atoms, we show that the interface between MgNi 2 and Mg 2NiH 4 is the most probable location of the growth reaction. We have obtained cathode luminescence spectra of the Mg 2NiH 4 hydride film. Mg 2NiH 4 is found to be an indirect gap semiconductor with a gap value of ∼1.6 eV. However, luminescence with quanta energy higher than the band gap is registered. We associate this fact with Van Hove singularities in the Mg 2NiH 4 density of states.
UR - http://www.scopus.com/inward/record.url?scp=85140354417&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/1697441f-e7c3-3bcb-8290-387b57a83105/
U2 - 10.1016/j.tsf.2022.139556
DO - 10.1016/j.tsf.2022.139556
M3 - Article
VL - 762
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
M1 - 139556
ER -
ID: 100018893