We have studied the electroluminescence (EL) from Si-SiO₂ structures containing excess ion-implanted silicon in the oxide layer. The implantation of 150-keV silicon ions to doses in the range from 5 × 10¹⁶ to 3 × 10¹⁷ cm^-2 leads to the appearance of emission bands at 2.7 and 4.4 eV in the EL spectrum, which are usually assigned to the silylene centers. It is suggested that the formation of the corresponding emission centers is directly related to the ion implantation process, irrespective of the type of implanted ions.