Standard

The electrically active centers in oxygen-implanted silicon. / Loshachenko, A.S.; Vyvenko, O.F.; Shek, E.I.; Sobolev, N.A.

в: Semiconductors, Том 47, № 2, 2013, стр. 285-288.

Результаты исследований: Научные публикации в периодических изданиях › статья

Harvard

Loshachenko, AS, Vyvenko, OF, Shek, EI & Sobolev, NA 2013, 'The electrically active centers in oxygen-implanted silicon', Semiconductors, Том. 47, № 2, стр. 285-288. https://doi.org/10.1134/S1063782613020164

APA

Loshachenko, A. S., Vyvenko, O. F., Shek, E. I., & Sobolev, N. A. (2013). The electrically active centers in oxygen-implanted silicon. Semiconductors, 47(2), 285-288. https://doi.org/10.1134/S1063782613020164

Vancouver

Loshachenko AS, Vyvenko OF, Shek EI, Sobolev NA. The electrically active centers in oxygen-implanted silicon. Semiconductors. 2013;47(2):285-288. https://doi.org/10.1134/S1063782613020164

Author

Loshachenko, A.S. ; Vyvenko, O.F. ; Shek, E.I. ; Sobolev, N.A. / The electrically active centers in oxygen-implanted silicon. в: Semiconductors. 2013 ; Том 47, № 2. стр. 285-288.

BibTeX

@article{b15d384cadb04155bdbad8c93901b973,
title = "The electrically active centers in oxygen-implanted silicon",
author = "A.S. Loshachenko and O.F. Vyvenko and E.I. Shek and N.A. Sobolev",
year = "2013",
doi = "10.1134/S1063782613020164",
language = "English",
volume = "47",
pages = "285--288",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - The electrically active centers in oxygen-implanted silicon

AU - Loshachenko, A.S.

AU - Vyvenko, O.F.

AU - Shek, E.I.

AU - Sobolev, N.A.

PY - 2013

Y1 - 2013

U2 - 10.1134/S1063782613020164

DO - 10.1134/S1063782613020164

M3 - Article

VL - 47

SP - 285

EP - 288

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 7388796