Standard
THE DIFFUSION MECHANISM IN THE FORMATION OF GAAS AND ALGAAS NANOWHISKERS DURING THE PROCESS OF MOLECULAR-BEAM EPITAXY. / Cirlin, G.E.; Sibirev, N.V.; Samsonenko, Yu.B.; Tonkikh, A.A.; Dubrovski, V.G.; Soshnikov, I.P.; Ustinov, V.M.
в:
Semiconductors, Том 39, № 5, 2005, стр. 557-564.
Результаты исследований: Научные публикации в периодических изданиях › статья
Harvard
Cirlin, GE
, Sibirev, NV, Samsonenko, YB, Tonkikh, AA, Dubrovski, VG, Soshnikov, IP & Ustinov, VM 2005, '
THE DIFFUSION MECHANISM IN THE FORMATION OF GAAS AND ALGAAS NANOWHISKERS DURING THE PROCESS OF MOLECULAR-BEAM EPITAXY',
Semiconductors, Том. 39, № 5, стр. 557-564.
APA
Cirlin, G. E.
, Sibirev, N. V., Samsonenko, Y. B., Tonkikh, A. A., Dubrovski, V. G., Soshnikov, I. P., & Ustinov, V. M. (2005).
THE DIFFUSION MECHANISM IN THE FORMATION OF GAAS AND ALGAAS NANOWHISKERS DURING THE PROCESS OF MOLECULAR-BEAM EPITAXY.
Semiconductors,
39(5), 557-564.
Vancouver
Author
BibTeX
@article{edee940804714a32a1ce1c299fa2a229,
title = "THE DIFFUSION MECHANISM IN THE FORMATION OF GAAS AND ALGAAS NANOWHISKERS DURING THE PROCESS OF MOLECULAR-BEAM EPITAXY",
author = "G.E. Cirlin and N.V. Sibirev and Yu.B. Samsonenko and A.A. Tonkikh and V.G. Dubrovski and I.P. Soshnikov and V.M. Ustinov",
year = "2005",
language = "English",
volume = "39",
pages = "557--564",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "5",
}
RIS
TY - JOUR
T1 - THE DIFFUSION MECHANISM IN THE FORMATION OF GAAS AND ALGAAS NANOWHISKERS DURING THE PROCESS OF MOLECULAR-BEAM EPITAXY
AU - Cirlin, G.E.
AU - Sibirev, N.V.
AU - Samsonenko, Yu.B.
AU - Tonkikh, A.A.
AU - Dubrovski, V.G.
AU - Soshnikov, I.P.
AU - Ustinov, V.M.
PY - 2005
Y1 - 2005
M3 - Article
VL - 39
SP - 557
EP - 564
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 5
ER -
