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Temperature properties of intracenter luminescence of Mn2+ ions in diluted magnetic semiconductors and related heterostructures. / Agekyan, V.F.; Serov, A.Y.; Filosofov, N.G.; Karczewski, G.

в: Physics of the Solid State, Том 57, № 11, 2015, стр. 2179-2183.

Результаты исследований: Научные публикации в периодических изданияхстатья

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@article{490b9824a2904ff99eeb643e3a4ac4ac,
title = "Temperature properties of intracenter luminescence of Mn2+ ions in diluted magnetic semiconductors and related heterostructures",
abstract = "The intracenter luminescence intensity of Mn2+ ions in II–VI diluted magnetic semiconductors weakly varies in the temperature range of 5–60 K, but a further increase in temperature leads to a rapid quenching of luminescence. There is an opinion that a drastic change in the temperature dependence of the intracenter luminescence of Mn2+ at about 60 K is associated with distortion of an anionic tetrahedron whose center is occupied by the manganese ion. In this work, the temperature and kinetic properties of the intracenter luminescence of Mn2+ have been studied at different levels of optical excitation in bulk diluted magnetic semiconductor crystals and the related quantum-well structures. It has been found that quenching of the intracenter luminescence of Mn2+ is determined by a cooperative process (up-conversion), the efficiency of which increases with an acceleration of migration and an increase in the density of excited Mn2+ ions.",
author = "V.F. Agekyan and A.Y. Serov and N.G. Filosofov and G. Karczewski",
year = "2015",
doi = "10.1134/S1063783415110025",
language = "English",
volume = "57",
pages = "2179--2183",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "11",

}

RIS

TY - JOUR

T1 - Temperature properties of intracenter luminescence of Mn2+ ions in diluted magnetic semiconductors and related heterostructures

AU - Agekyan, V.F.

AU - Serov, A.Y.

AU - Filosofov, N.G.

AU - Karczewski, G.

PY - 2015

Y1 - 2015

N2 - The intracenter luminescence intensity of Mn2+ ions in II–VI diluted magnetic semiconductors weakly varies in the temperature range of 5–60 K, but a further increase in temperature leads to a rapid quenching of luminescence. There is an opinion that a drastic change in the temperature dependence of the intracenter luminescence of Mn2+ at about 60 K is associated with distortion of an anionic tetrahedron whose center is occupied by the manganese ion. In this work, the temperature and kinetic properties of the intracenter luminescence of Mn2+ have been studied at different levels of optical excitation in bulk diluted magnetic semiconductor crystals and the related quantum-well structures. It has been found that quenching of the intracenter luminescence of Mn2+ is determined by a cooperative process (up-conversion), the efficiency of which increases with an acceleration of migration and an increase in the density of excited Mn2+ ions.

AB - The intracenter luminescence intensity of Mn2+ ions in II–VI diluted magnetic semiconductors weakly varies in the temperature range of 5–60 K, but a further increase in temperature leads to a rapid quenching of luminescence. There is an opinion that a drastic change in the temperature dependence of the intracenter luminescence of Mn2+ at about 60 K is associated with distortion of an anionic tetrahedron whose center is occupied by the manganese ion. In this work, the temperature and kinetic properties of the intracenter luminescence of Mn2+ have been studied at different levels of optical excitation in bulk diluted magnetic semiconductor crystals and the related quantum-well structures. It has been found that quenching of the intracenter luminescence of Mn2+ is determined by a cooperative process (up-conversion), the efficiency of which increases with an acceleration of migration and an increase in the density of excited Mn2+ ions.

U2 - 10.1134/S1063783415110025

DO - 10.1134/S1063783415110025

M3 - Article

VL - 57

SP - 2179

EP - 2183

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 11

ER -

ID: 3979577