DOI

A kinetic description of non-equilibrium processes using particle methods is applied to the investigation of electron gas temperature characteristics in the n-GaAs vacuum structure under conditions of field emission. The details of n-GaAs band structure and all essential types of electron scattering are taken into account. Based on the results of calculations, the following conclusion is given: in passing from room to liquid-nitrogen temperature the impact of L-valley electrons on the emission process increases in importance, whereas the contribution of the thermalized Γ-valley electrons in the emission current is reduced. At the nitrogen temperature the process of electron field emission is almost totally defined by the hot L-valley electrons.

Язык оригиналаанглийский
Страницы (с-по)883-889
Число страниц7
ЖурналSemiconductor Science and Technology
Том11
Номер выпуска6
DOI
СостояниеОпубликовано - июн 1996

    Предметные области Scopus

  • Электроника, оптика и магнитные материалы
  • Физика конденсатов
  • Химия материалов
  • Электротехника и электроника

ID: 18140703