Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in singleor two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.
Язык оригинала | английский |
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Номер статьи | 1949 |
Число страниц | 14 |
Журнал | Nanomaterials |
Том | 11 |
Номер выпуска | 8 |
DOI | |
Состояние | Опубликовано - авг 2021 |
ID: 88772674