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Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation. / Batalov, R. I.; Valeev, V. F.; Nuzhdin, V. I.; Vorebev, V. V.; Osin, Yu N.; Lebedev, D. V.; Bukharaev, A. A.; Stepanov, A. L.

в: Russian Microelectronics, Том 44, № 8, 01.12.2015, стр. 546-551.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Batalov, RI, Valeev, VF, Nuzhdin, VI, Vorebev, VV, Osin, YN, Lebedev, DV, Bukharaev, AA & Stepanov, AL 2015, 'Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation', Russian Microelectronics, Том. 44, № 8, стр. 546-551. https://doi.org/10.1134/S1063739715080028

APA

Batalov, R. I., Valeev, V. F., Nuzhdin, V. I., Vorebev, V. V., Osin, Y. N., Lebedev, D. V., Bukharaev, A. A., & Stepanov, A. L. (2015). Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation. Russian Microelectronics, 44(8), 546-551. https://doi.org/10.1134/S1063739715080028

Vancouver

Batalov RI, Valeev VF, Nuzhdin VI, Vorebev VV, Osin YN, Lebedev DV и пр. Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation. Russian Microelectronics. 2015 Дек. 1;44(8):546-551. https://doi.org/10.1134/S1063739715080028

Author

Batalov, R. I. ; Valeev, V. F. ; Nuzhdin, V. I. ; Vorebev, V. V. ; Osin, Yu N. ; Lebedev, D. V. ; Bukharaev, A. A. ; Stepanov, A. L. / Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation. в: Russian Microelectronics. 2015 ; Том 44, № 8. стр. 546-551.

BibTeX

@article{4b6068fc6d7b4e4abdf323e844e72331,
title = "Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation",
abstract = "In this paper, a new technique is proposed for synthesis of porous silicon (PSi) layers with silver nanoparticles based on the method of low-energy high-dose metal ion implantation into Si. In order to demonstrate this technique, the implantation at room temperature of a polished Si wafer by Ag+ ions with the ion energy of 30 keV, ion dose of 1.5 × 1017 ion/cm2, and ion current density of 8 µA/cm2 is carried out. Using methods of high resolution scanning electron and atomic-force microscopy, electron probe microanalysis, and Raman scattering, it is shown that ion implantation results in the formation, on the surface of irradiated Si, of a thin amorphous layer of PSi with the average pore size of 150–180 nm, a pore depth of about 100 nm, and wall thickness between pores of about 30–60 nm. Moreover, the PSi structure contains Ag nanoparticles 5–15 nm in size. It is established that, during the ion implantation, the sputtering of the Si surface by Ag+ ions takes place, which was not observed previously. Based on the data obtained, it is concluded that, in contrast to chemical techniques, the proposed physical technique for PSi formation can be integrated into the modern advanced process of fabricating and improving electronic circuits based on industrial ion implantation.",
keywords = "amorphization, ion implantation, porous silicon, silver nanoparticles, surface sputtering",
author = "Batalov, {R. I.} and Valeev, {V. F.} and Nuzhdin, {V. I.} and Vorebev, {V. V.} and Osin, {Yu N.} and Lebedev, {D. V.} and Bukharaev, {A. A.} and Stepanov, {A. L.}",
year = "2015",
month = dec,
day = "1",
doi = "10.1134/S1063739715080028",
language = "English",
volume = "44",
pages = "546--551",
journal = "Russian Microelectronics",
issn = "1063-7397",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "8",

}

RIS

TY - JOUR

T1 - Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation

AU - Batalov, R. I.

AU - Valeev, V. F.

AU - Nuzhdin, V. I.

AU - Vorebev, V. V.

AU - Osin, Yu N.

AU - Lebedev, D. V.

AU - Bukharaev, A. A.

AU - Stepanov, A. L.

PY - 2015/12/1

Y1 - 2015/12/1

N2 - In this paper, a new technique is proposed for synthesis of porous silicon (PSi) layers with silver nanoparticles based on the method of low-energy high-dose metal ion implantation into Si. In order to demonstrate this technique, the implantation at room temperature of a polished Si wafer by Ag+ ions with the ion energy of 30 keV, ion dose of 1.5 × 1017 ion/cm2, and ion current density of 8 µA/cm2 is carried out. Using methods of high resolution scanning electron and atomic-force microscopy, electron probe microanalysis, and Raman scattering, it is shown that ion implantation results in the formation, on the surface of irradiated Si, of a thin amorphous layer of PSi with the average pore size of 150–180 nm, a pore depth of about 100 nm, and wall thickness between pores of about 30–60 nm. Moreover, the PSi structure contains Ag nanoparticles 5–15 nm in size. It is established that, during the ion implantation, the sputtering of the Si surface by Ag+ ions takes place, which was not observed previously. Based on the data obtained, it is concluded that, in contrast to chemical techniques, the proposed physical technique for PSi formation can be integrated into the modern advanced process of fabricating and improving electronic circuits based on industrial ion implantation.

AB - In this paper, a new technique is proposed for synthesis of porous silicon (PSi) layers with silver nanoparticles based on the method of low-energy high-dose metal ion implantation into Si. In order to demonstrate this technique, the implantation at room temperature of a polished Si wafer by Ag+ ions with the ion energy of 30 keV, ion dose of 1.5 × 1017 ion/cm2, and ion current density of 8 µA/cm2 is carried out. Using methods of high resolution scanning electron and atomic-force microscopy, electron probe microanalysis, and Raman scattering, it is shown that ion implantation results in the formation, on the surface of irradiated Si, of a thin amorphous layer of PSi with the average pore size of 150–180 nm, a pore depth of about 100 nm, and wall thickness between pores of about 30–60 nm. Moreover, the PSi structure contains Ag nanoparticles 5–15 nm in size. It is established that, during the ion implantation, the sputtering of the Si surface by Ag+ ions takes place, which was not observed previously. Based on the data obtained, it is concluded that, in contrast to chemical techniques, the proposed physical technique for PSi formation can be integrated into the modern advanced process of fabricating and improving electronic circuits based on industrial ion implantation.

KW - amorphization

KW - ion implantation

KW - porous silicon

KW - silver nanoparticles

KW - surface sputtering

UR - http://www.scopus.com/inward/record.url?scp=84947943387&partnerID=8YFLogxK

U2 - 10.1134/S1063739715080028

DO - 10.1134/S1063739715080028

M3 - Article

AN - SCOPUS:84947943387

VL - 44

SP - 546

EP - 551

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - 8

ER -

ID: 34921249