TY - JOUR

T1 - Synthesis of a Thin Metal Hydride Mg2NiH4 Film on a Nickel Substrate

AU - Барабан, Александр Петрович

AU - Войт, Алексей Петрович

AU - Габис, Игорь Евгеньевич

AU - Elets, Dmitriy I.

AU - Levin, Aleksandr A.

AU - Зайцев, Дмитрий

PY - 2024/2/1

Y1 - 2024/2/1

N2 - Abstract: This work is a continuation of the previous study of the synthesis of intermetallic hydride compound Mg2NiH4 in the reaction between a nickel foil and magnesium hydride MgH2 in a hydrogen atmosphere at pressures exceeding the decomposition pressures of both MgH2 and Mg2NiH4. The synthesis was performed at temperatures of 400 and 475°С. With allowance for the results obtained previously at a temperature 450°С, it was found that, after some incubation time, the thickness of grown Mg2NiH4 film depends linearly on time. During incubation, a sublayer of intermetallic compound MgNi2 is synthesized. The set of these data validates the previously proposed synthesis mechanism, where the limiting factor is the diffusion entry of nickel atoms with a constant rate over the MgNi2 sublayer. Based on the analysis of X-ray diffraction (XRD) data, it was concluded that the MgNi2 sublayer thickness is approximately the same for all three synthesis temperatures. The film growth rates were found for all three temperatures using thermal desorption spectroscopy, and the kinetic parameters of the diffusion of nickel atoms in the sublayer of intermetallic compound MgNi2 were determined based on these data.

AB - Abstract: This work is a continuation of the previous study of the synthesis of intermetallic hydride compound Mg2NiH4 in the reaction between a nickel foil and magnesium hydride MgH2 in a hydrogen atmosphere at pressures exceeding the decomposition pressures of both MgH2 and Mg2NiH4. The synthesis was performed at temperatures of 400 and 475°С. With allowance for the results obtained previously at a temperature 450°С, it was found that, after some incubation time, the thickness of grown Mg2NiH4 film depends linearly on time. During incubation, a sublayer of intermetallic compound MgNi2 is synthesized. The set of these data validates the previously proposed synthesis mechanism, where the limiting factor is the diffusion entry of nickel atoms with a constant rate over the MgNi2 sublayer. Based on the analysis of X-ray diffraction (XRD) data, it was concluded that the MgNi2 sublayer thickness is approximately the same for all three synthesis temperatures. The film growth rates were found for all three temperatures using thermal desorption spectroscopy, and the kinetic parameters of the diffusion of nickel atoms in the sublayer of intermetallic compound MgNi2 were determined based on these data.

UR - https://www.mendeley.com/catalogue/e8df26b4-9067-34a1-bf68-b98c775515ba/

U2 - 10.1134/s1063774523601259

DO - 10.1134/s1063774523601259

M3 - Article

VL - 69

SP - 93

EP - 101

JO - Crystallography Reports

JF - Crystallography Reports

SN - 1063-7745

IS - 1

ER -