Standard

Synthesis and properties of hydrogenated aluminum thin film by reactive sputtering. / Baraban, A. P.; Dobrotvorskii, M. A.; Elets, D. I.; Gabis, I. E.; Kuznetsov, V. G.; Piven, V. A.; Voyt, A. P.; Selivanov, A. A.

в: Thin Solid Films, Том 709, 138217, 01.09.2020.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Baraban, AP, Dobrotvorskii, MA, Elets, DI, Gabis, IE, Kuznetsov, VG, Piven, VA, Voyt, AP & Selivanov, AA 2020, 'Synthesis and properties of hydrogenated aluminum thin film by reactive sputtering', Thin Solid Films, Том. 709, 138217. https://doi.org/10.1016/j.tsf.2020.138217

APA

Baraban, A. P., Dobrotvorskii, M. A., Elets, D. I., Gabis, I. E., Kuznetsov, V. G., Piven, V. A., Voyt, A. P., & Selivanov, A. A. (2020). Synthesis and properties of hydrogenated aluminum thin film by reactive sputtering. Thin Solid Films, 709, [138217]. https://doi.org/10.1016/j.tsf.2020.138217

Vancouver

Baraban AP, Dobrotvorskii MA, Elets DI, Gabis IE, Kuznetsov VG, Piven VA и пр. Synthesis and properties of hydrogenated aluminum thin film by reactive sputtering. Thin Solid Films. 2020 Сент. 1;709. 138217. https://doi.org/10.1016/j.tsf.2020.138217

Author

Baraban, A. P. ; Dobrotvorskii, M. A. ; Elets, D. I. ; Gabis, I. E. ; Kuznetsov, V. G. ; Piven, V. A. ; Voyt, A. P. ; Selivanov, A. A. / Synthesis and properties of hydrogenated aluminum thin film by reactive sputtering. в: Thin Solid Films. 2020 ; Том 709.

BibTeX

@article{8f9341cfc1ed471abe8fd9a9e687234e,
title = "Synthesis and properties of hydrogenated aluminum thin film by reactive sputtering",
abstract = "The synthesis procedure of a thin aluminum-hydrogen film on a silicon substrate is described and its result thoroughly investigated by a number of experimental methods. The reactive sputtering deposition was carried out to obtain a structure containing aluminum hydride. The resulting film has characteristic non-metallic properties, though according to thermal desorption studies its hydrogen content is close to AlH1.1, which is lower than stoichiometric aluminum hydride AlH3. Thermal desorption of hydrogen differs significantly from that of AlH3 powder as it has not one but several peaks. According to transmission electron microscopy the film is mostly amorphous but contains crystalline phase. Our interpretation of the experimental data suggests that some hydride phase microcrystals were formed as the film was deposited, but most hydrogen was stored inside the film without forming a crystalline structure in both bounded and unbounded states. The luminescent properties of the synthesized film are similar to aluminum hydride, and it can be concluded that the amorphous Al-H structure of the synthesized film shows resemblance with AlH3 crystals populated with hydrogen vacancies.",
keywords = "Alane, Hydrogen storage, Reactive sputtering, Thin films, IRRADIATION, SURFACE, AL",
author = "Baraban, {A. P.} and Dobrotvorskii, {M. A.} and Elets, {D. I.} and Gabis, {I. E.} and Kuznetsov, {V. G.} and Piven, {V. A.} and Voyt, {A. P.} and Selivanov, {A. A.}",
year = "2020",
month = sep,
day = "1",
doi = "10.1016/j.tsf.2020.138217",
language = "English",
volume = "709",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Synthesis and properties of hydrogenated aluminum thin film by reactive sputtering

AU - Baraban, A. P.

AU - Dobrotvorskii, M. A.

AU - Elets, D. I.

AU - Gabis, I. E.

AU - Kuznetsov, V. G.

AU - Piven, V. A.

AU - Voyt, A. P.

AU - Selivanov, A. A.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - The synthesis procedure of a thin aluminum-hydrogen film on a silicon substrate is described and its result thoroughly investigated by a number of experimental methods. The reactive sputtering deposition was carried out to obtain a structure containing aluminum hydride. The resulting film has characteristic non-metallic properties, though according to thermal desorption studies its hydrogen content is close to AlH1.1, which is lower than stoichiometric aluminum hydride AlH3. Thermal desorption of hydrogen differs significantly from that of AlH3 powder as it has not one but several peaks. According to transmission electron microscopy the film is mostly amorphous but contains crystalline phase. Our interpretation of the experimental data suggests that some hydride phase microcrystals were formed as the film was deposited, but most hydrogen was stored inside the film without forming a crystalline structure in both bounded and unbounded states. The luminescent properties of the synthesized film are similar to aluminum hydride, and it can be concluded that the amorphous Al-H structure of the synthesized film shows resemblance with AlH3 crystals populated with hydrogen vacancies.

AB - The synthesis procedure of a thin aluminum-hydrogen film on a silicon substrate is described and its result thoroughly investigated by a number of experimental methods. The reactive sputtering deposition was carried out to obtain a structure containing aluminum hydride. The resulting film has characteristic non-metallic properties, though according to thermal desorption studies its hydrogen content is close to AlH1.1, which is lower than stoichiometric aluminum hydride AlH3. Thermal desorption of hydrogen differs significantly from that of AlH3 powder as it has not one but several peaks. According to transmission electron microscopy the film is mostly amorphous but contains crystalline phase. Our interpretation of the experimental data suggests that some hydride phase microcrystals were formed as the film was deposited, but most hydrogen was stored inside the film without forming a crystalline structure in both bounded and unbounded states. The luminescent properties of the synthesized film are similar to aluminum hydride, and it can be concluded that the amorphous Al-H structure of the synthesized film shows resemblance with AlH3 crystals populated with hydrogen vacancies.

KW - Alane

KW - Hydrogen storage

KW - Reactive sputtering

KW - Thin films

KW - IRRADIATION

KW - SURFACE

KW - AL

UR - http://www.scopus.com/inward/record.url?scp=85087592017&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2020.138217

DO - 10.1016/j.tsf.2020.138217

M3 - Article

AN - SCOPUS:85087592017

VL - 709

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

M1 - 138217

ER -

ID: 60774913