Standard

Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3. / Shvets, I. A.; Klimovskikh, I. I.; Aliev, Z. S.; Babanly, M. B.; Zúñiga, F. J.; Sánchez-Barriga, J.; Krivenkov, M.; Shikin, A. M.; Chulkov, E. V.

в: Physical Review B, Том 100, № 19, 195127, 18.11.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Shvets, IA, Klimovskikh, II, Aliev, ZS, Babanly, MB, Zúñiga, FJ, Sánchez-Barriga, J, Krivenkov, M, Shikin, AM & Chulkov, EV 2019, 'Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3', Physical Review B, Том. 100, № 19, 195127. https://doi.org/10.1103/PhysRevB.100.195127

APA

Shvets, I. A., Klimovskikh, I. I., Aliev, Z. S., Babanly, M. B., Zúñiga, F. J., Sánchez-Barriga, J., Krivenkov, M., Shikin, A. M., & Chulkov, E. V. (2019). Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3. Physical Review B, 100(19), [195127]. https://doi.org/10.1103/PhysRevB.100.195127

Vancouver

Shvets IA, Klimovskikh II, Aliev ZS, Babanly MB, Zúñiga FJ, Sánchez-Barriga J и пр. Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3. Physical Review B. 2019 Нояб. 18;100(19). 195127. https://doi.org/10.1103/PhysRevB.100.195127

Author

Shvets, I. A. ; Klimovskikh, I. I. ; Aliev, Z. S. ; Babanly, M. B. ; Zúñiga, F. J. ; Sánchez-Barriga, J. ; Krivenkov, M. ; Shikin, A. M. ; Chulkov, E. V. / Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3. в: Physical Review B. 2019 ; Том 100, № 19.

BibTeX

@article{4c3f61800fee433fba9523136e0717da,
title = "Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3",
abstract = "By means of angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations, the electronic band structure of the topological insulator PbBi4Te4Se3 for both five-layer and seven-layer surface terminations is investigated. The measured and calculated band structure features are in good agreement and indicate two well-resolved topological surface states with distinct spatial localizations within bulk band gap of about 0.3 eV.",
keywords = "Bismuth compounds, Electric insulators, electronic structure, Energy gap, Lead compounds, Photoelectron spectroscopy, Selenium compounds, Tellurium compounds, Topological insulators, STATES, SPIN",
author = "Shvets, {I. A.} and Klimovskikh, {I. I.} and Aliev, {Z. S.} and Babanly, {M. B.} and Z{\'u}{\~n}iga, {F. J.} and J. S{\'a}nchez-Barriga and M. Krivenkov and Shikin, {A. M.} and Chulkov, {E. V.}",
year = "2019",
month = nov,
day = "18",
doi = "10.1103/PhysRevB.100.195127",
language = "English",
volume = "100",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "19",

}

RIS

TY - JOUR

T1 - Surface electronic structure of the wide band gap topological insulator PbBi4Te4Se3

AU - Shvets, I. A.

AU - Klimovskikh, I. I.

AU - Aliev, Z. S.

AU - Babanly, M. B.

AU - Zúñiga, F. J.

AU - Sánchez-Barriga, J.

AU - Krivenkov, M.

AU - Shikin, A. M.

AU - Chulkov, E. V.

PY - 2019/11/18

Y1 - 2019/11/18

N2 - By means of angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations, the electronic band structure of the topological insulator PbBi4Te4Se3 for both five-layer and seven-layer surface terminations is investigated. The measured and calculated band structure features are in good agreement and indicate two well-resolved topological surface states with distinct spatial localizations within bulk band gap of about 0.3 eV.

AB - By means of angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations, the electronic band structure of the topological insulator PbBi4Te4Se3 for both five-layer and seven-layer surface terminations is investigated. The measured and calculated band structure features are in good agreement and indicate two well-resolved topological surface states with distinct spatial localizations within bulk band gap of about 0.3 eV.

KW - Bismuth compounds

KW - Electric insulators

KW - electronic structure

KW - Energy gap

KW - Lead compounds

KW - Photoelectron spectroscopy

KW - Selenium compounds

KW - Tellurium compounds

KW - Topological insulators

KW - STATES

KW - SPIN

UR - http://www.scopus.com/inward/record.url?scp=85075284141&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.100.195127

DO - 10.1103/PhysRevB.100.195127

M3 - Article

AN - SCOPUS:85075284141

VL - 100

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

M1 - 195127

ER -

ID: 49436354