Using the laser ablation method, AgI stoichiometric compound films, (GeSe2)30(Sb2Se3)30(AgI)40 glass films, and films comprised of alternating layers of AgI and the glass were obtained. Individual layer thickness amounts to 10 nm, and the total number of layers is about 100. Film conductivity measurements were carried out during several cycles of heating up to 200 °C and cooling to room temperature. It was established that after three cycles of thermal processing specific lateral conductivity of the film is equal to 0.3 S cm^-1 and conductivity activation energy is equal to 0.07 eV at room temperature.