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Sub-Poissonian single-mode lasing in a semiconductor laser with an external cavity. / Fofanov, Ya A.; Sokolov, I. V.
в: Journal of Optical Technology (A Translation of Opticheskii Zhurnal), Том 70, № 1, 01.2003, стр. 38-41.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Sub-Poissonian single-mode lasing in a semiconductor laser with an external cavity
AU - Fofanov, Ya A.
AU - Sokolov, I. V.
N1 - Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2003/1
Y1 - 2003/1
N2 - This paper describes a single-mode source of sub-Poissonian radiation based on a semiconductor injection laser with external optical feedback. All additional noise components (the subthreshold modes), including the modes of the external cavity, are suppressed in the spectrum of the laser radiation. The laser is intended for supersensitive spectroscopic and analytical studies.
AB - This paper describes a single-mode source of sub-Poissonian radiation based on a semiconductor injection laser with external optical feedback. All additional noise components (the subthreshold modes), including the modes of the external cavity, are suppressed in the spectrum of the laser radiation. The laser is intended for supersensitive spectroscopic and analytical studies.
UR - http://www.scopus.com/inward/record.url?scp=0037219168&partnerID=8YFLogxK
U2 - 10.1364/JOT.70.000038
DO - 10.1364/JOT.70.000038
M3 - Article
AN - SCOPUS:0037219168
VL - 70
SP - 38
EP - 41
JO - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)
JF - Journal of Optical Technology (A Translation of Opticheskii Zhurnal)
SN - 1070-9762
IS - 1
ER -
ID: 73495325