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Studying the semiconductor-metal phase transition in nanoscale vanadium dioxide, doped with ions of 3d-elements on a silicon surface. / Nazarov, D. V.; Osmolowskaya, O. M.; Smirnov, V. M.; Glumov, O. V.; Melnikova, N. A.; Murin, I. V.

в: Bulletin of the Russian Academy of Sciences: Physics, Том 77, № 3, 03.2013, стр. 271-274.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Nazarov, DV, Osmolowskaya, OM, Smirnov, VM, Glumov, OV, Melnikova, NA & Murin, IV 2013, 'Studying the semiconductor-metal phase transition in nanoscale vanadium dioxide, doped with ions of 3d-elements on a silicon surface', Bulletin of the Russian Academy of Sciences: Physics, Том. 77, № 3, стр. 271-274. https://doi.org/10.3103/S1062873813030301, https://doi.org/10.3103/S1062873813030301

APA

Nazarov, D. V., Osmolowskaya, O. M., Smirnov, V. M., Glumov, O. V., Melnikova, N. A., & Murin, I. V. (2013). Studying the semiconductor-metal phase transition in nanoscale vanadium dioxide, doped with ions of 3d-elements on a silicon surface. Bulletin of the Russian Academy of Sciences: Physics, 77(3), 271-274. https://doi.org/10.3103/S1062873813030301, https://doi.org/10.3103/S1062873813030301

Vancouver

Nazarov DV, Osmolowskaya OM, Smirnov VM, Glumov OV, Melnikova NA, Murin IV. Studying the semiconductor-metal phase transition in nanoscale vanadium dioxide, doped with ions of 3d-elements on a silicon surface. Bulletin of the Russian Academy of Sciences: Physics. 2013 Март;77(3):271-274. https://doi.org/10.3103/S1062873813030301, https://doi.org/10.3103/S1062873813030301

Author

Nazarov, D. V. ; Osmolowskaya, O. M. ; Smirnov, V. M. ; Glumov, O. V. ; Melnikova, N. A. ; Murin, I. V. / Studying the semiconductor-metal phase transition in nanoscale vanadium dioxide, doped with ions of 3d-elements on a silicon surface. в: Bulletin of the Russian Academy of Sciences: Physics. 2013 ; Том 77, № 3. стр. 271-274.

BibTeX

@article{9d4639185be146008cf7b73d257c4719,
title = "Studying the semiconductor-metal phase transition in nanoscale vanadium dioxide, doped with ions of 3d-elements on a silicon surface",
abstract = "Nanoscale vanadium dioxide doped with chromium and iron is obtained via molecular layering method on the surface of a single-crystal silicon. The qualitative and quantitative composition of the samples is determined by photometry and magnetochemical analysis. The morphology is examined by AFM and SEM. Two independent methods (magnetic susceptibility and impedance spectroscopy) show the presence of the semiconductor-metal phase transition in the obtained structures in the range 100-125 K. The considerable influence of the alloying element content on the characteristics of the phase transition, including its temperature, is established.",
author = "Nazarov, {D. V.} and Osmolowskaya, {O. M.} and Smirnov, {V. M.} and Glumov, {O. V.} and Melnikova, {N. A.} and Murin, {I. V.}",
year = "2013",
month = mar,
doi = "10.3103/S1062873813030301",
language = "English",
volume = "77",
pages = "271--274",
journal = "Bulletin of the Russian Academy of Sciences: Physics",
issn = "1062-8738",
publisher = "Allerton Press, Inc.",
number = "3",

}

RIS

TY - JOUR

T1 - Studying the semiconductor-metal phase transition in nanoscale vanadium dioxide, doped with ions of 3d-elements on a silicon surface

AU - Nazarov, D. V.

AU - Osmolowskaya, O. M.

AU - Smirnov, V. M.

AU - Glumov, O. V.

AU - Melnikova, N. A.

AU - Murin, I. V.

PY - 2013/3

Y1 - 2013/3

N2 - Nanoscale vanadium dioxide doped with chromium and iron is obtained via molecular layering method on the surface of a single-crystal silicon. The qualitative and quantitative composition of the samples is determined by photometry and magnetochemical analysis. The morphology is examined by AFM and SEM. Two independent methods (magnetic susceptibility and impedance spectroscopy) show the presence of the semiconductor-metal phase transition in the obtained structures in the range 100-125 K. The considerable influence of the alloying element content on the characteristics of the phase transition, including its temperature, is established.

AB - Nanoscale vanadium dioxide doped with chromium and iron is obtained via molecular layering method on the surface of a single-crystal silicon. The qualitative and quantitative composition of the samples is determined by photometry and magnetochemical analysis. The morphology is examined by AFM and SEM. Two independent methods (magnetic susceptibility and impedance spectroscopy) show the presence of the semiconductor-metal phase transition in the obtained structures in the range 100-125 K. The considerable influence of the alloying element content on the characteristics of the phase transition, including its temperature, is established.

UR - http://www.scopus.com/inward/record.url?scp=84887518263&partnerID=8YFLogxK

U2 - 10.3103/S1062873813030301

DO - 10.3103/S1062873813030301

M3 - Article

VL - 77

SP - 271

EP - 274

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

SN - 1062-8738

IS - 3

ER -

ID: 7377811