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Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). / Davydov, V. Yu; Usachov, D. Yu; Lebedev, S. P.; Smirnov, A. N.; Levitskii, V. S.; Eliseyev, I. A.; Alekseev, P. A.; Dunaevskiy, M. S.; Vilkov, O. Yu; Rybkin, A. G.; Lebedev, A. A.

в: Semiconductors, Том 51, № 8, 01.08.2017, стр. 1072-1080.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Davydov, VY, Usachov, DY, Lebedev, SP, Smirnov, AN, Levitskii, VS, Eliseyev, IA, Alekseev, PA, Dunaevskiy, MS, Vilkov, OY, Rybkin, AG & Lebedev, AA 2017, 'Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)', Semiconductors, Том. 51, № 8, стр. 1072-1080. https://doi.org/10.1134/S1063782617080073

APA

Davydov, V. Y., Usachov, D. Y., Lebedev, S. P., Smirnov, A. N., Levitskii, V. S., Eliseyev, I. A., Alekseev, P. A., Dunaevskiy, M. S., Vilkov, O. Y., Rybkin, A. G., & Lebedev, A. A. (2017). Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). Semiconductors, 51(8), 1072-1080. https://doi.org/10.1134/S1063782617080073

Vancouver

Davydov VY, Usachov DY, Lebedev SP, Smirnov AN, Levitskii VS, Eliseyev IA и пр. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). Semiconductors. 2017 Авг. 1;51(8):1072-1080. https://doi.org/10.1134/S1063782617080073

Author

Davydov, V. Yu ; Usachov, D. Yu ; Lebedev, S. P. ; Smirnov, A. N. ; Levitskii, V. S. ; Eliseyev, I. A. ; Alekseev, P. A. ; Dunaevskiy, M. S. ; Vilkov, O. Yu ; Rybkin, A. G. ; Lebedev, A. A. / Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001). в: Semiconductors. 2017 ; Том 51, № 8. стр. 1072-1080.

BibTeX

@article{467665b5be9d4819863f5f74c8bf7af8,
title = "Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)",
abstract = "The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.",
author = "Davydov, {V. Yu} and Usachov, {D. Yu} and Lebedev, {S. P.} and Smirnov, {A. N.} and Levitskii, {V. S.} and Eliseyev, {I. A.} and Alekseev, {P. A.} and Dunaevskiy, {M. S.} and Vilkov, {O. Yu} and Rybkin, {A. G.} and Lebedev, {A. A.}",
year = "2017",
month = aug,
day = "1",
doi = "10.1134/S1063782617080073",
language = "English",
volume = "51",
pages = "1072--1080",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "8",

}

RIS

TY - JOUR

T1 - Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

AU - Davydov, V. Yu

AU - Usachov, D. Yu

AU - Lebedev, S. P.

AU - Smirnov, A. N.

AU - Levitskii, V. S.

AU - Eliseyev, I. A.

AU - Alekseev, P. A.

AU - Dunaevskiy, M. S.

AU - Vilkov, O. Yu

AU - Rybkin, A. G.

AU - Lebedev, A. A.

PY - 2017/8/1

Y1 - 2017/8/1

N2 - The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

AB - The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

UR - http://www.scopus.com/inward/record.url?scp=85028356828&partnerID=8YFLogxK

U2 - 10.1134/S1063782617080073

DO - 10.1134/S1063782617080073

M3 - Article

AN - SCOPUS:85028356828

VL - 51

SP - 1072

EP - 1080

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

ID: 9216761