Polarized neutron reflectometry was used to investigate the amorphous multilayer nanostructures [(Co₄₅Fe₄₅Zr₁₀) _x(Al₂O₃)_100-x/a-Si:H]_m, whose magnetic properties are dependent on the concentration of the magnetic constituent (x=34, 47 and 60 at%) as well as on the thicknesses of the metal-dielectric (Co₄₅Fe₄₅Zr₁₀) _x(Al₂O₃)_100-x and semiconductor a-Si:H layers. The average magnetization of the individual magnetic layer is found to be inhomogeneous with the magnetically active central part and two magnetically dead parts at the interfaces.