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Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films. / Komolov, A.S.; Lazneva, E.F.; Gerasimova, N.B.; Panina, Y.A.; Baramygin, A.V.; Zashikhin, G.D.; Pshenichnyuk, S.A.

в: Physics of the Solid State, Том 58, № 2, 2016, стр. 377-381.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Komolov, AS, Lazneva, EF, Gerasimova, NB, Panina, YA, Baramygin, AV, Zashikhin, GD & Pshenichnyuk, SA 2016, 'Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films', Physics of the Solid State, Том. 58, № 2, стр. 377-381. https://doi.org/10.1134/S106378341602013X

APA

Komolov, A. S., Lazneva, E. F., Gerasimova, N. B., Panina, Y. A., Baramygin, A. V., Zashikhin, G. D., & Pshenichnyuk, S. A. (2016). Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films. Physics of the Solid State, 58(2), 377-381. https://doi.org/10.1134/S106378341602013X

Vancouver

Komolov AS, Lazneva EF, Gerasimova NB, Panina YA, Baramygin AV, Zashikhin GD и пр. Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films. Physics of the Solid State. 2016;58(2):377-381. https://doi.org/10.1134/S106378341602013X

Author

Komolov, A.S. ; Lazneva, E.F. ; Gerasimova, N.B. ; Panina, Y.A. ; Baramygin, A.V. ; Zashikhin, G.D. ; Pshenichnyuk, S.A. / Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films. в: Physics of the Solid State. 2016 ; Том 58, № 2. стр. 377-381.

BibTeX

@article{a54c59450d5046ae974a4e431e13e59c,
title = "Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films",
abstract = "{\textcopyright} 2016, Pleiades Publishing, Ltd. This paper presents the results of the investigation of the interface potential barrier and vacant electronic states in the energy range of 5 to 20 eV above the Fermi level (EF) in the deposition of perylene tetracarboxylic dianhydride (PTCDA) films on the oxidized germanium surface ((GeO2)Ge). The concentration of oxide on the (GeO2)Ge surface was determined by X-ray photoelectron spectroscopy. In the experiments, we used the recording of the reflection of a test low-energy electron beam from the surface, implemented in the mode of total current spectroscopy. The theoretical analysis involves the calculation of the energy and spatial distribution of the orbitals of PTCDA molecules by the density functional theory (DFT) using B3LYP functional with the basis 6-31G(d), followed by the scaling of the calculated values of the orbital energy according to the procedure well-proven in the studies of small organic conjugated molecules. The pattern of changes in the fine structure of",
author = "A.S. Komolov and E.F. Lazneva and N.B. Gerasimova and Y.A. Panina and A.V. Baramygin and G.D. Zashikhin and S.A. Pshenichnyuk",
year = "2016",
doi = "10.1134/S106378341602013X",
language = "English",
volume = "58",
pages = "377--381",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

RIS

TY - JOUR

T1 - Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films

AU - Komolov, A.S.

AU - Lazneva, E.F.

AU - Gerasimova, N.B.

AU - Panina, Y.A.

AU - Baramygin, A.V.

AU - Zashikhin, G.D.

AU - Pshenichnyuk, S.A.

PY - 2016

Y1 - 2016

N2 - © 2016, Pleiades Publishing, Ltd. This paper presents the results of the investigation of the interface potential barrier and vacant electronic states in the energy range of 5 to 20 eV above the Fermi level (EF) in the deposition of perylene tetracarboxylic dianhydride (PTCDA) films on the oxidized germanium surface ((GeO2)Ge). The concentration of oxide on the (GeO2)Ge surface was determined by X-ray photoelectron spectroscopy. In the experiments, we used the recording of the reflection of a test low-energy electron beam from the surface, implemented in the mode of total current spectroscopy. The theoretical analysis involves the calculation of the energy and spatial distribution of the orbitals of PTCDA molecules by the density functional theory (DFT) using B3LYP functional with the basis 6-31G(d), followed by the scaling of the calculated values of the orbital energy according to the procedure well-proven in the studies of small organic conjugated molecules. The pattern of changes in the fine structure of

AB - © 2016, Pleiades Publishing, Ltd. This paper presents the results of the investigation of the interface potential barrier and vacant electronic states in the energy range of 5 to 20 eV above the Fermi level (EF) in the deposition of perylene tetracarboxylic dianhydride (PTCDA) films on the oxidized germanium surface ((GeO2)Ge). The concentration of oxide on the (GeO2)Ge surface was determined by X-ray photoelectron spectroscopy. In the experiments, we used the recording of the reflection of a test low-energy electron beam from the surface, implemented in the mode of total current spectroscopy. The theoretical analysis involves the calculation of the energy and spatial distribution of the orbitals of PTCDA molecules by the density functional theory (DFT) using B3LYP functional with the basis 6-31G(d), followed by the scaling of the calculated values of the orbital energy according to the procedure well-proven in the studies of small organic conjugated molecules. The pattern of changes in the fine structure of

U2 - 10.1134/S106378341602013X

DO - 10.1134/S106378341602013X

M3 - Article

VL - 58

SP - 377

EP - 381

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 2

ER -

ID: 7927644